Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device

ABSTRACT

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

FIELD OF THE INVENTION

The present invention relates to a film for flip chip type semiconductorback surface and a dicing tape-integrated film for semiconductor backsurface. The film for flip chip type semiconductor back surface is usedfor the purposes of protecting a back surface of a semiconductor elementsuch as a semiconductor chip and enhancing strength thereof and thelike. Also, the invention relates to a process for producing asemiconductor device using a dicing tape-integrated film forsemiconductor back surface and a flip chip type semiconductor device.

BACKGROUND OF THE INVENTION

Recently, thinning and miniaturization of a semiconductor device and itspackage have been increasingly demanded. Therefore, as the semiconductordevice and its package, flip chip type semiconductor devices in which asemiconductor element such as a semiconductor chip is mounted (flipchip-connected) on a substrate by means of flip chip bonding have beenwidely utilized. In such flip chip connection, a semiconductor chip isfixed to a substrate in a form where a circuit face of the semiconductorchip is opposed to an electrode-formed face of the substrate. In such asemiconductor device or the like, there may be a case where the backsurface of the semiconductor chip is protected with a protective film toprevent the semiconductor chip from damaging or the like (see, PatentDocument 1 to 10).

Patent Document 1: JP-A-2008-166451

Patent Document 2: JP-A-2008-006386

Patent Document 3: JP-A-2007-261035

Patent Document 4: JP-A-2007-250970

Patent Document 5: JP-A-2007-158026

Patent Document 6: JP-A-2004-221169

Patent Document 7: JP-A-2004-214288

Patent Document 8: JP-A-2004-142430

Patent Document 9: JP-A-2004-072108

Patent Document 10: JP-A-2004-063551

However, the protection of the back surface of a semiconductor chip witha protective film requires an additional step of attaching theprotective film to the back surface of the semiconductor chip obtainedin a dicing step. As a result, the number of the processing stepsincreases and the production cost is thereby increased. Moreover, therecent tendency toward thinning may result in that semiconductor chipsare sometimes damaged in the step of picking up the semiconductor chips.Accordingly, until the picking-up step inclusive, semiconductor wafersand semiconductor chips are required to be reinforced for the purpose ofenhancing the mechanical strength thereof. In particular, the thinningof the semiconductor chips may generate warp on the semiconductor chipsin some cases, so that suppression or prevention of the generation ofwarp is required.

SUMMARY OF THE INVENTION

The present invention has been made in consideration of the foregoingproblem and an object thereof is to provide a film for flip chip typesemiconductor back surface capable of suppressing or preventing thegeneration of warp on a semiconductor element flip chip-connected on anadherend, and a dicing tape-integrated wafer back surface protectivefilm.

Moreover, another object of the invention is to provide a process forproducing a semiconductor device capable of flip chip-connecting asemiconductor element on an adherend with suppressing the generation ofwarp and, as a result, capable of improving a production yield.

In order to solve the foregoing related-art problems, the presentinventors made extensive and intensive investigations. As a result, ithas been found that the generation of warp on the semiconductor flipchip-connected on an adherend can be reduced by controlling a volumecontraction ratio at thermal curing of a film for flip chip typesemiconductor back surface, leading to accomplishment of the invention.

Namely, the present invention provides a film for flip chip typesemiconductor back surface to be formed on a back surface of asemiconductor element flip chip-connected onto an adherend, wherein thefilm for flip chip type semiconductor back surface before thermal curinghas, at the thermal curing thereof, a volume contraction ratio within arange of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

In flip chip mounting, it is common that a molding resin forencapsulating the whole of a semiconductor package is not used and onlya bump connection part between the adherend and the semiconductorelement is encapsulated with an encapsulating resin called underfill.Therefore, the back surface of the semiconductor element is naked. Forexample, at the time when the encapsulating resin is thermally cured, astress is applied to the semiconductor element owing to the curing andcontraction thereof and, resulting from the stress, warp may begenerated on the semiconductor element in some cases. Particularly, in athin semiconductor element having a thickness of 300 μm or less(further, a thickness of 200 μm or less), the generation of warp becomesremarkable.

The film for flip chip type semiconductor back surface of the inventionexerts the function of protecting a semiconductor element flipchip-connected onto an adherend when the film is formed on a backsurface of the semiconductor element. Moreover, the film for flip chiptype semiconductor back surface of the invention is simultaneously curedand contracted at the thermal curing of the encapsulating resin. On thisoccasion, according to the film for flip chip type semiconductor backsurface of the invention, since a volume contraction ratio within arange of 23° C. to 165° C. at thermal curing of the film for flip chiptype semiconductor back surface before thermal curing is 100 ppm/° C. ormore, against the stress acting on the semiconductor element, the filmcan apply a stress offsetting or alleviating the stress to thesemiconductor element. As a result, the warp of the semiconductorelement before the reflow step can be effectively suppressed orprevented. Moreover, since the volume contraction ratio is 400 ppm/° C.or less, an appropriate degree of contraction corresponding to thedegree of contraction of the encapsulating material can be achieved.Incidentally, the back surface of the semiconductor element means asurface opposite to the surface thereof on which a circuit is formed.

In the foregoing constitution, the film for semiconductor back surfaceafter the thermal curing preferably has a tensile storage modulus at 23°C. of 1 GPa to 5 GPa. When the tensile storage modulus after the thermalcuring is 1 GPa or more, the warp can be more effectively suppressed orprevented. Moreover, when the tensile storage modulus after the thermalcuring is 5 GPa or less, the generation of the warp to the reverse sidecan be suppressed or prevented.

In the foregoing constitution, the film for flip chip type semiconductorback surface preferably has a thickness of 10 μm to 40 μm. Bycontrolling the thickness to 10 μm or more, the warp can be moreeffectively suppressed or prevented. Moreover, by controlling thethickness to 40 μm or less, the generation of the warp to the reverseside can be suppressed or prevented. Furthermore, by controlling thethickness to 40 μm or less, it becomes possible to thin a semiconductordevice composed of the semiconductor element flip chip-mounted on theadherend.

The present invention also provides a dicing tape-integrated film forsemiconductor back surface, comprising a dicing tape and theabove-mentioned film for flip chip type semiconductor back surfacelaminated on the dicing tape, wherein the dicing tape comprises a basematerial and a pressure-sensitive adhesive layer laminated on the basematerial, and the film for flip chip type semiconductor back surface islaminated on the pressure-sensitive adhesive layer of the dicing tape.

According to the dicing tape-integrated film for semiconductor backsurface having the constitution as above, since the dicing tape and thefilm for flip chip type semiconductor back surface are formed in anintegrated form, the dicing tape-integrated film for semiconductor backsurface can also be provided for a dicing step of dicing a semiconductorwafer to prepare a semiconductor element or the subsequent picking-upstep. Namely, when a dicing tape is attached to the back surface of asemiconductor wafer prior to the dicing step, the film for semiconductorback surface can also be attached thereto, and therefore, a step ofattaching the film for semiconductor back surface alone (attaching stepof the film for semiconductor back surface) is not required. As aresult, the number of processing steps may be reduced. Additionally,since the film for semiconductor back surface protects the back surfaceof the semiconductor wafer and that of the semiconductor element formedby dicing, damaging of the semiconductor element can be reduced orprevented during the dicing step and the subsequent steps (e.g.,picking-up step). As a result, the production yield of the flip chiptype semiconductor device can be improved.

The present invention further provides a process for producing asemiconductor device using the above-mentioned dicing tape-integratedfilm for semiconductor back surface, the process comprising: attaching asemiconductor wafer onto the film for flip chip type semiconductor backsurface of the dicing tape-integrated film for semiconductor backsurface, dicing the semiconductor wafer to form a semiconductor element,peeling the semiconductor element from the pressure-sensitive adhesivelayer of the dicing tape together with the film for flip chip typesemiconductor back surface, and connecting the semiconductor elementonto an adherend.

In the foregoing process, since the dicing tape-integrated film forsemiconductor back surface is attached to the back surface of thesemiconductor wafer and therefore, the step of attaching the film forsemiconductor back surface alone (attaching step of the film forsemiconductor back surface) is not required. Moreover, since the backsurface of the semiconductor wafer and the semiconductor element isprotected by the film for semiconductor back surface during the dicingof the semiconductor wafer and the picking-up of the semiconductorelement formed by the dicing, damaging and the like can be prevented. Asa result, the flip chip type semiconductor device can be produced withan improved production yield.

The foregoing step of flip chip connecting preferably comprises fillingan encapsulating resin into a gap between the adherend and thesemiconductor element flip chip-bonded on the adherend, followed bythermally curing the encapsulating resin.

At the time when the encapsulating resin is thermally cured, a stress isapplied to the semiconductor element owing to the curing and contractionthereof and, resulting from the stress, warp may be generated on thesemiconductor element in some cases. Particularly, in a thinsemiconductor element having a thickness of 300 μm or less (further, athickness of 200 μm or less), the generation of the warp becomesremarkable. However, in the foregoing process, since the film for flipchip type semiconductor back surface exhibits a volume contraction ratioof 100 ppm/° C. or more within a range of 23° C. to 165° C. at thethermal curing of the film for flip chip type semiconductor back surfacebefore thermal curing, against the stress acting on the semiconductorelement, the film can apply a stress offsetting or alleviating thestress to the semiconductor element. As a result, the warp of thesemiconductor element before the reflow step can be effectivelysuppressed or prevented. Moreover, since the volume contraction ratio is400 ppm/° C. or less, an appropriate degree of contraction correspondingto the degree of contraction of the encapsulating material can beachieved.

The present invention furthermore provides a flip chip typesemiconductor device, which is manufactured by the above-mentionedprocess.

According to the film for flip chip type semiconductor back surface ofthe invention, since the film is formed on a back surface of asemiconductor element flip chip-connected on an adherend, the filmexerts the function of protecting the semiconductor element. Moreover,since the film for flip chip type semiconductor back surface exhibits avolume contraction ratio of 100 ppm/° C. to 400 ppm/° C. within a rangeof 23° C. to 165° C. at thermal curing of the film for flip chip typesemiconductor back surface before thermal curing, the warp of thesemiconductor element before the reflow step can be effectivelysuppressed or prevented.

Moreover, according to the dicing tape-integrated film for semiconductorback surface of the invention, the dicing tape and the film for flipchip type semiconductor back surface are formed in an integrated form,and therefore, the dicing tape-integrated film for semiconductor backsurface can also be provided for a dicing step of dicing a semiconductorwafer to prepare a semiconductor element or the subsequent picking-upstep. As a result, a step of attaching the film for semiconductor backsurface alone (attaching step of the film for semiconductor backsurface) is not required. Furthermore, in the subsequent dicing step andpick-up step, since the film for semiconductor back surface is attachedto the back surface of the semiconductor wafer or the back surface ofthe semiconductor element formed by dicing, the semiconductor wafer andthe semiconductor element can be effectively protected and the damage ofthe semiconductor element can be suppressed or prevented. Moreover, atthe time of flip chip-connection of the semiconductor element on theadherend, the generation of warp of the semiconductor element can beprevented.

Furthermore, according to the process for producing the semiconductordevice of the invention, since the dicing tape-integrated film forsemiconductor back surface is attached to the back surface of thesemiconductor wafer and therefore, the step of attaching the film forsemiconductor back surface alone is not required. Moreover, since theback surfaces of the semiconductor wafer and the semiconductor elementare protected by the film for semiconductor back surface during thedicing of the semiconductor wafer and the picking-up of thesemiconductor element formed by the dicing, damaging and the like can beprevented. Also, generation of warp on the semiconductor element can beprevented at the time when the semiconductor element is flipchip-connected onto the adherend. As a result, the flip chip typesemiconductor device can be produced with improving the productionyield.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional schematic view showing one embodiment of adicing tape-integrated film for semiconductor back surface of theinvention.

FIGS. 2A to 2D are cross-sectional schematic views showing oneembodiment of a process for producing a semiconductor device using adicing tape-integrated film for semiconductor back surface of theinvention.

DESCRIPTION OF REFERENCE NUMERALS AND SIGNS

1 Dicing Tape-Integrated Film for Semiconductor Back Surface

2 Film for Semiconductor Back Surface

3 Dicing Tape

31 Base Material

32 Pressure-Sensitive Adhesive Layer

33 Part Corresponding to Semiconductor Wafer-Attaching Part

4 Semiconductor Wafer

5 Semiconductor Chip

51 Bump Formed on the Circuit Face Side of Semiconductor Chip 5

6 Adherend

61 Conductive Material for Conjunction Attached to Connection Pad ofAdherend 6

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention are described with reference toFIG. 1 but the invention is not restricted to these embodiments. FIG. 1is a cross-sectional schematic view showing one embodiment of a dicingtape-integrated film for semiconductor back surface according to thepresent embodiment. Incidentally, in the figures in the presentspecification, parts that are unnecessary for the description are notgiven, and there are parts shown by magnifying, minifying, etc. in orderto make the description easy.

(Dicing Tape-Integrated Film for Semiconductor Back Surface)

As shown in FIG. 1, the dicing tape-integrated film 1 for semiconductorback surface (hereinafter sometimes also referred to as “dicingtape-integrated semiconductor back surface protective film”, “film forsemiconductor back surface with dicing tape”, or “semiconductor backsurface protective film with dicing tape”) has a configurationincluding: the dicing tape 3 including the pressure-sensitive adhesivelayer 32 formed on the base material 31, and, as formed on thepressure-sensitive adhesive layer 32, the film 2 for flip chip typesemiconductor back surface (hereinafter sometimes referred to as “filmfor semiconductor back surface” or “semiconductor back surfaceprotective film”). Also as shown in FIG. 1, the dicing tape-integratedfilm for semiconductor back surface of the invention may be so designedthat the film 2 for semiconductor back surface is formed only on thepart 33 corresponding to the semiconductor wafer-attaching part;however, the film for semiconductor back surface may be formed over thewhole surface of the pressure-sensitive adhesive layer 32, or the filmfor semiconductor back surface may be formed on the part larger than thepart 33 corresponding to the semiconductor wafer-attaching part butsmaller than the whole surface of the pressure-sensitive adhesive layer32. Incidentally, the surface of the film 2 for semiconductor backsurface (surface to be attached to the back surface of wafer) may beprotected with a separator or the like until the film is attached towafer back surface.

(Film for Flip Chip Type Semiconductor Back Surface)

The film 2 for semiconductor back surface has a film shape. The film 2for semiconductor back surface is usually in an uncured state (includinga semi-cured state) in the embodiment of the dicing tape-integrated filmfor semiconductor back surface as a product and is thermally cured afterthe dicing tape-integrated film for semiconductor back surface isattached to the semiconductor wafer (details are described below).

The film 2 for semiconductor back surface according to the presentembodiment has a property that the volume contraction ratio within arange of 23° C. to 165° C. at thermal curing of the film for flip chiptype semiconductor back surface before thermal curing is 100 ppm/° C. to400 ppm/° C. In the case where the volume contraction ratio is 100 ppm/°C. or more, even when the semiconductor element flip chip-connected onthe adherend is thin (for example, a thickness of 300 μm or less,further a thickness of 200 μm or less), the warp can be effectivelysuppressed or prevented. In flip chip connection, after thesemiconductor element is flip chip-bonded on the adherend, only aconnection part between the adherend and the semiconductor element isencapsulated with an encapsulating material (such as an encapsulatingresin called underfill). Further, the encapsulating resin is thermallycured, but a stress is applied to the semiconductor element due to thecuring and contraction of the encapsulating material at that time andthus warp may be generated. However, the film 2 for semiconductor backsurface according to the present embodiment is cured and contractedtogether with the encapsulating material at the thermal curing of theencapsulating material. On this occasion, since the volume contractionratio is 100 ppm/° C. or more, it becomes possible to apply a stressalso from the film 2 for semiconductor back surface to the semiconductorelement and therefore, the stress originated from the curing andcontraction of the encapsulating material can be offset or alleviated.As a result, the generation of warp of the semiconductor element can besuppressed or prevented. Moreover, since the volume contraction ratio is400 ppm/° C. or less, an appropriate degree of contraction correspondingto the degree of contraction of the encapsulating material can beachieved. The above-mentioned volume contraction ratio of the film 2 forsemiconductor back surface is preferably 150 ppm/° C. to 350 ppm/° C.,more preferably 200 ppm/° C. to 350 ppm/° C.

Here, although the film for semiconductor back surface 2 may be a singlelayer or may be a laminated film in which a plurality of layers arelaminated, in the case where the film for semiconductor back surface isa laminated film, the volume contraction ratio may be 100 ppm/° C. to400 ppm/° C. as a whole of the laminated film. The foregoing volumecontraction ratio of the film for semiconductor back surface can becontrolled by suitably setting up the kind and content of thethermosetting resin, etc. For example, it can be controlled by theblending amount of the thermosetting resins different in linear thermalexpansion coefficient. Incidentally, the volume contraction ratio of thefilm for semiconductor back surface can be measured according to themethod described in Examples.

The film for semiconductor back surface is formed of at least athermosetting resin and is preferably formed of at least a thermosettingresin and a thermoplastic resin. When the film is formed of at least athermosetting resin, the film for semiconductor back surface caneffectively exhibit a function as an adhesive layer.

Examples of the thermoplastic resin include natural rubber, butylrubber, isoprene rubber, chloroprene rubber, an ethylene-vinyl acetatecopolymer, an ethylene-acrylic acid copolymer, an ethylene-acrylic acidester copolymer, a polybutadiene resin, a polycarbonate resin, athermoplastic polyimide resin, a polyamide resin such as 6-nylon and6,6-nylon, a phenoxy resin, an acrylic resin, a saturated polyesterresin such as PET (polyethylene terephthalate) or PBT (polybutyleneterephthalate), a polyamideimide resin, or a fluorine resin. Thethermoplastic resin may be employed singly or in a combination of two ormore kinds. Among these thermoplastic resins, an acrylic resincontaining a small amount of ionic impurities, having high heatresistance and capable of securing reliability of a semiconductorelement is especially preferable.

The acrylic resins are not particularly restricted, and examples thereofinclude polymers containing one kind or two or more kinds of esters ofacrylic acid or methacrylic acid having a straight chain or branchedalkyl group having 30 or less carbon atoms, preferably 4 to 18 carbonatoms, more preferably 6 to 10 carbon atoms, and especially 8 or 9carbon atoms as component(s). Namely, in the invention, the acrylicresin has a broad meaning also including a methacrylic resin. Examplesof the alkyl group include a methyl group, an ethyl group, a propylgroup, an isopropyl group, an n-butyl group, a t-butyl group, anisobutyl group, a pentyl group, an isopentyl group, a hexyl group, aheptyl group, a 2-ethylhexyl group, an octyl group, an isooctyl group, anonyl group, an isononyl group, a decyl group, an isodecyl group, anundecyl group, a dodecyl group (lauryl group), a tridecyl group, atetradecyl group, a stearyl group, and an octadecyl group.

Moreover, other monomers for forming the acrylic resins (monomers otherthan the alkyl esters of acrylic acid or methacrylic acid in which thealkyl group is one having 30 or less carbon atoms) are not particularlyrestricted, and examples thereof include carboxyl group-containingmonomers such as acrylic acid, methacrylic acid, carboxylethyl acrylate,carboxylpentyl acrylate, itaconic acid, maleic acid, fumaric acid, andcrotonic acid; acid anhydride monomers such as maleic anhydride anditaconic anhydride; hydroxyl group-containing monomers such as2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl(meth)acrylate,4-hydroxybutyl(meth)acrylate, 6-hydroxyhexyl(meth)acrylate,8-hydroxyoctyl(meth)acrylate, 10-hydroxydecyl (meth)acrylate,12-hydroxylauryl(meth)acrylate, and(4-hydroxymethylcyclohexyl)-methylacrylate; sulfonic acidgroup-containing monomers such as styrenesulfonic acid, allylsulfonicacid, 2-(meth)acrylamido-2-methylpropanesulfonic acid,(meth)acrylamidopropanesulfonic acid, sulfopropyl(meth)acrylate, and(meth)acryloyloxynaphthalenesulfonic acid; and phosphoric acidgroup-containing monomers such as 2-hydroxyethylacryloyl phosphate. Inthis regard, the (meth)acrylic acid means acrylic acid and/ormethacrylic acid, (meth)acrylate means acrylate and/or methacrylate,(meth)acryl means acryl and/or methacryl, etc., which shall be appliedover the whole specification.

Moreover, examples of the thermosetting resin include, in addition to anepoxy resin and a phenol resin, an amino resin, an unsaturated polyesterresin, a polyurethane resin, a silicone resin and a thermosettingpolyimide resin. The thermosetting resin may be employed singly or in acombination of two or more kinds. As the thermosetting resin, an epoxyresin containing only a small amount of ionic impurities which corrode asemiconductor element is suitable. Also, the phenol resin is suitablyused as a curing agent of the epoxy resins.

The epoxy resin is not particularly restricted and, for example, adifunctional epoxy resin or a polyfunctional epoxy resin such as abisphenol A type epoxy resin, a bisphenol F type epoxy resin, abisphenol S type epoxy resin, a brominated bisphenol A type epoxy resin,a hydrogenated bisphenol A type epoxy resin, a bisphenol AF type epoxyresin, a biphenyl type epoxy resin, a naphthalene type epoxy resin, afluorene type epoxy resin, a phenol novolak type epoxy resin, ano-cresol novolak type epoxy resin, a trishydroxyphenylmethane type epoxyresin and a tetraphenylolethane type epoxy resin, or an epoxy resin suchas a hydantoin type epoxy resin, a trisglycidylisocyanurate type epoxyresin or a glycidylamine type epoxy resin may be used.

As the epoxy resin, among those exemplified above, a novolak type epoxyresin, a biphenyl type epoxy resin, a trishydroxyphenylmethane typeepoxy resin, and a tetraphenylolethane type epoxy resin are preferable.This is because these epoxy resins have high reactivity with a phenolresin as a curing agent and are superior in heat resistance and thelike.

Furthermore, the above-mentioned phenol resin acts as a curing agent ofthe epoxy resin, and examples thereof include novolak type phenol resinssuch as phenol novolak resins, phenol aralkyl resins, cresol novolakresins, tert-butylphenol novolak resins, and nonylphenol novolak resins;resol type phenol resins; and polyoxystyrenes such as poly-p-oxystyrene.The phenol resin may be employed singly or in a combination of two ormore kinds. Among these phenol resins, phenol novolak resins and phenolaralkyl resins are especially preferable. This is because connectionreliability of the semiconductor device can be improved.

The mixing proportion of the epoxy resin to the phenol resin ispreferably made, for example, such that the hydroxyl group in the phenolresin becomes 0.5 equivalents to 2.0 equivalents per equivalent of theepoxy group in the epoxy resin component. It is more preferably 0.8equivalents to 1.2 equivalents. Namely, when the mixing proportion isoutside the range, a curing reaction does not proceed sufficiently, andthe characteristics of the epoxy resin cured product tends todeteriorate.

The content of the thermosetting resin is preferably 5% by weight to 90%by weight, more preferably 10% by weight to 85% by weight, furtherpreferably 15% by weight to 80% by weight based on the whole resincomponents of the film for semiconductor back surface. By controllingthe content to 5% by weight or more, the degree of thermal curingcontraction can be easily made 2% by volume or more. Moreover, at thethermal curing of the encapsulating resin, the film for semiconductorback surface can be sufficiently thermally cured and thus can be surelyadhered and fixed to the back surface of the semiconductor element toproduce a flip chip type semiconductor device exhibiting no peeling. Onthe other hand, by controlling the content to 90% by weight or less,warp of a package (PKG: a flip chip type semiconductor device) can besuppressed.

A thermal curing-accelerating catalyst for the epoxy resins and thephenol resins is not particularly restricted and can be suitablyselected from known thermal curing-accelerating catalysts and used. Thethermal curing-accelerating catalyst may be employed singly or in acombination of two or more kinds. As the thermal curing-acceleratingcatalyst, for example, an amine-based curing-accelerating catalyst, aphosphorus-based curing-accelerating catalyst, an imidazole-basedcuring-accelerating catalyst, a boron-based curing-acceleratingcatalyst, or a phosphorus-boron-based curing-accelerating catalyst canbe used.

It is suitable that the film for semiconductor back surface is formed ofa resin composition containing an epoxy resin and a phenol resin or aresin composition containing an epoxy resin, a phenol resin and anacrylic resin. Since these resins are small in ionic impurities and highin heat resistance, reliability of the semiconductor element can besecured.

It is important that the film 2 for semiconductor back surface hasadhesiveness (close adhesion) to the back surface (non-circuit face) ofthe semiconductor wafer. The film 2 for semiconductor back surface canbe, for example, formed of a resin composition containing an epoxy resinas a thermosetting resin. For the purpose of crosslinking the film 2 forsemiconductor back surface to some extent beforehand, a polyfunctionalcompound capable of reacting with a molecular chain terminal functionalgroup or the like of a polymer is preferably added as a crosslinkingagent at the preparation. According to this, it is possible to enhancean adhesive characteristic under high temperatures and to improve heatresistance.

An adhesive force of the film for semiconductor back surface to thesemiconductor wafer (23° C., a peeling angle of 180°, a peeling rate of300 mm/min) preferably falls within a range of 0.5 N/20 mm to 15 N/20mm, more preferably 0.7 N/20 mm to 10 N/20 mm. By controlling theadhesive force to 0.5 N/20 mm or more, the film is attached to thesemiconductor wafer and the semiconductor element with excellentadhesiveness and can be prevented from generating lifting or the like.Moreover, at the dicing of the semiconductor wafer, the generation ofchip fly can be also prevented. On the other hand, by controlling theadhesive force to 15 N/20 mm or less, the film can be easily peeled fromthe dicing tape.

The crosslinking agent is not particularly restricted and knowncrosslinking agents can be used. Specifically, for example, not onlyisocyanate-based crosslinking agents, epoxy-based crosslinking agents,melamine-based crosslinking agents, and peroxide-based crosslinkingagents but also urea-based crosslinking agents, metal alkoxide-basedcrosslinking agents, metal chelate-based crosslinking agents, metalsalt-based crosslinking agents, carbodiimide-based crosslinking agents,oxazoline-based crosslinking agents, aziridine-based crosslinkingagents, amine-based crosslinking agents, and the like may be mentioned.As the crosslinking agent, an isocyanate-based crosslinking agent or anepoxy-based crosslinking agent is suitable. The crosslinking agent maybe used singly or in a combination of two or more kinds.

Examples of the isocyanate-based crosslinking agents include loweraliphatic polyisocyanates such as 1,2-ethylene diisocyanate,1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; alicyclicpolyisocyanates such as cyclopentylene diisocyanate, cyclohexylenediisocyanate, isophorone diisocyanate, hydrogenated tolylenediisocyanate, and hydrogenated xylylene diisocyanate; and aromaticpolyisocyanates such as 2,4-tolylene diisocyanate, 2,6-tolylenediisocyanate, 4,4′-diphenylmethane diisocyanate, and xylylenediisocyanate. In addition, a trimethylolpropane/tolylene diisocyanatetrimer adduct [a trade name “COLONATE L” manufactured by NipponPolyurethane Industry Co., Ltd.], a trimethylolpropane/hexamethylenediisocyanate trimer adduct [a trade name “COLONATE HL” manufactured byNippon Polyurethane Industry Co., Ltd.], and the like are also used.Moreover, examples of the epoxy-based crosslinking agents includeN,N,N′,N′-tetraglycidyl-m-xylenediamine, diglycidylaniline,1,3-bis(N,N-glycidylaminomethyl)cyclohexane, 1,6-hexanediol diglycidylether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidylether, propylene glycol diglycidyl ether, polyethylene glycol diglycidylether, polypropylene glycol diglycidyl ether, sorbitol polyglycidylether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether,polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether,trimethylolpropnane polyglycidyl ether, adipic acid diglycidyl ester,o-phthalic acid diglycidyl ester, triglycidyl-tris(2-hydroxyethyl)isocyanurate, resorcin diglycidyl ether, and bisphenol-S-diglycidylether, and also epoxy-based resins having two or more epoxy groups inthe molecule.

The amount of the crosslinking agent to be used is not particularlyrestricted and can be appropriately selected depending on the degree ofthe crosslinking. Specifically, it is preferable that the amount of thecrosslinking agent to be used is usually 7 parts by weight or less (forexample, 0.05 to 7 parts by weight) based on 100 parts by weight of thepolymer component (particularly, a polymer having a functional group atthe molecular chain end). When the amount of the crosslinking agent islarger than 7 parts by weight based on 100 parts by weight of thepolymer component, the adhesive force is lowered, so that the case isnot preferred. From the viewpoint of improving the cohesive force, theamount of the crosslinking agent is preferably 0.05 parts by weight ormore based on 100 parts by weight of the polymer component.

In the invention, instead of the use of the crosslinking agent ortogether with the use of the crosslinking agent, it is also possible toperform a crosslinking treatment by irradiation with an electron beam,UV light, or the like.

The film for semiconductor back surface is preferably colored. Thereby,an excellent laser marking property and an excellent appearance propertycan be exhibited, and it becomes possible to make a semiconductor devicehaving a value-added appearance property. As above, since the coloredfilm for semiconductor back surface has an excellent marking property,marking can be performed to impart various kinds of information such asliteral information and graphical information to the face on thenon-circuit side of the semiconductor element or a semiconductor deviceusing the semiconductor element by utilizing any of various markingmethods such as a printing method and a laser marking method through thefilm of semiconductor back surface. Particularly, by controlling thecolor of coloring, it becomes possible to observe the information (forexample, literal information and graphical information) imparted bymarking with excellent visibility. Moreover, when the film forsemiconductor back surface is colored, the dicing tape and the film forsemiconductor back surface can be easily distinguished from each other,so that workability and the like can be enhanced. Furthermore, forexample, as a semiconductor device, it is possible to classify productsthereof by using different colors. In the case where the film forsemiconductor back surface is colored (the case where the film isneither colorless nor transparent), the color shown by coloring is notparticularly limited but, for example, is preferably dark color such asblack, blue or red color, and black color is especially suitable.

In the present embodiment, dark color basically means a dark colorhaving L*, defined in L*a*b* color space, of 60 or smaller (0 to 60),preferably 50 or smaller (0 to 50), and more preferably 40 or smaller (0to 40).

Moreover, black color basically means a black-based color having L*,defined in L*a*b* color space, of 35 or smaller (0 to 35), preferably 30or smaller (0 to 30), and more preferably 25 or smaller (0 to 25). Inthis regard, in the black color, each of a* and b*, defined in theL*a*b* color space, can be suitably selected according to the value ofL*. For example, both of a* and b* are within the range of preferably−10 to 10, more preferably −5 to 5, and further preferably −3 to 3(particularly 0 or about 0).

In the present embodiment, L*, a*, and b* defined in the L*a*b* colorspace can be determined by a measurement with a color difference meter(a trade name “CR-200” manufactured by Minolta Ltd; color differencemeter). The L*a*b* color space is a color space recommended by theCommission Internationale de 1'Eclairage (CIE) in 1976, and means acolor space called CIE1976(L*a*b*) color space. Also, the L*a*b* colorspace is defined in Japanese Industrial Standards in JIS Z8729.

At coloring of the film for semiconductor back surface, according to anobjective color, a colorant (coloring agent) can be used. As such acolorant, various dark-colored colorants such as black-coloredcolorants, blue-colored colorants, and red-colored colorants can besuitably used and black-colored colorants are more suitable. Thecolorant may be any of pigments and dyes. The colorant may be employedsingly or in combination of two or more kinds. In this regard, as thedyes, it is possible to use any forms of dyes such as acid dyes,reactive dyes, direct dyes, disperse dyes, and cationic dyes. Moreover,also with regard to the pigments, the form thereof is not particularlyrestricted and can be suitably selected and used among known pigments.

In particular, when a dye is used as a colorant, the dye becomes in astate that it is homogeneously or almost homogeneously dispersed bydissolution in the film for semiconductor back surface, so that the filmfor semiconductor back surface (as a result, the dicing tape-integratedfilm for semiconductor back surface) having a homogeneous or almosthomogeneous color density can be easily produced. Accordingly, when adye is used as a colorant, the film for semiconductor back surface inthe dicing tape-integrated film for semiconductor back surface can havea homogeneous or almost homogeneous color density and can enhance amarking property and an appearance property.

The black-colored colorant is not particularly restricted and can be,for example, suitably selected from inorganic black-colored pigments andblack-colored dyes. Moreover, the black-colored colorant may be acolorant mixture in which a cyan-colored colorant (blue-green colorant),a magenta-colored colorant (red-purple colorant), and a yellow-coloredcolorant (yellow colorant) are mixed. The black-colored colorant may beemployed singly or in a combination of two or more kinds. Of course, theblack-colored colorant may be used in combination with a colorant of acolor other than black.

Specific examples of the black-colored colorant include carbon black(such as furnace black, channel black, acetylene black, thermal black,or lamp black), graphite, copper oxide, manganese dioxide, azo-typepigments (such as azomethine azo black), aniline black, perylene black,titanium black, cyanine black, active charcoal, ferrite (such asnon-magnetic ferrite or magnetic ferrite), magnetite, chromium oxide,iron oxide, molybdenum disulfide, a chromium complex, a composite oxidetype black pigment, and an anthraquinone type organic black pigment.

In the invention, as the black-colored colorant, black-colored dyes suchas C.I. Solvent Black 3, 7, 22, 27, 29, 34, 43, 70, C.I. Direct Black17, 19, 22, 32, 38, 51, 71, C.I. Acid Black 1, 2, 24, 26, 31, 48, 52,107, 109, 110, 119, 154, and C.I. Disperse Black 1, 3, 10, 24;black-colored pigments such as C.I. Pigment Black 1, 7; and the like canalso be utilized.

As such black-colored colorants, for example, a trade name “Oil BlackBY”, a trade name “Oil Black BS”, a trade name “Oil Black HBB”, a tradename “Oil Black 803”, a trade name “Oil Black 860”, a trade name “OilBlack 5970”, a trade name “Oil Black 5906”, a trade name “Oil Black5905” (manufactured by Orient Chemical Industries Co., Ltd.), and thelike are commercially available.

Examples of colorants other than the black-colored colorant includecyan-colored colorants, magenta-colored colorants, and yellow-coloredcolorants. Examples of the cyan-colored colorants include cyan-coloreddyes such as C.I. Solvent Blue 25, 36, 60, 70, 93, 95; C.I. Acid Blue 6and 45; cyan-colored pigments such as C.I. Pigment Blue 1, 2, 3, 15,15:1, 15:2, 15:3, 15:4, 15:5, 15:6, 16, 17, 17:1, 18, 22, 25, 56, 60,63, 65, 66; C.I. Vat Blue 4, 60; and C.I. Pigment Green 7.

Moreover, among the magenta colorants, examples of magenta-colored dyeinclude C.I. Solvent Red 1, 3, 8, 23, 24, 25, 27, 30, 49, 52, 58, 63,81, 82, 83, 84, 100, 109, 111, 121, 122; C.I. Disperse Red 9; C.I.Solvent Violet 8, 13, 14, 21, 27; C.I. Disperse Violet 1; C.I. Basic Red1, 2, 9, 12, 13, 14, 15, 17, 18, 22, 23, 24, 27, 29, 32, 34, 35, 36, 37,38, 39, 40; C.I. Basic Violet 1, 3, 7, 10, 14, 15, 21, 25, 26, 27 and28.

Among the magenta-colored colorants, examples of magenta-colored pigmentinclude C.I. Pigment Red 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14,15, 16, 17, 18, 19, 21, 22, 23, 30, 31, 32, 37, 38, 39, 40, 41, 42,48:1, 48:2, 48:3, 48:4, 49, 49:1, 50, 51, 52, 52:2, 53:1, 54, 55, 56,57:1, 58, 60, 60:1, 63, 63:1, 63:2, 64, 64:1, 67, 68, 81, 83, 87, 88,89, 90, 92, 101, 104, 105, 106, 108, 112, 114, 122, 123, 139, 144, 146,147, 149, 150, 151, 163, 166, 168, 170, 171, 172, 175, 176, 177, 178,179, 184, 185, 187, 190, 193, 202, 206, 207, 209, 219, 222, 224, 238,245; C.I. Pigment Violet 3, 9, 19, 23, 31, 32, 33, 36, 38, 43, 50; C.I.Vat Red 1, 2, 10, 13, 15, 23, 29 and 35.

Moreover, examples of the yellow-colored colorants includeyellow-colored dyes such as C.I. Solvent Yellow 19, 44, 77, 79, 81, 82,93, 98, 103, 104, 112, and 162; yellow-colored pigments such as C.I.Pigment Orange 31, 43; C.I. Pigment Yellow 1, 2, 3, 4, 5, 6, 7, 10, 11,12, 13, 14, 15, 16, 17, 23, 24, 34, 35, 37, 42, 53, 55, 65, 73, 74, 75,81, 83, 93, 94, 95, 97, 98, 100, 101, 104, 108, 109, 110, 113, 114, 116,117, 120, 128, 129, 133, 138, 139, 147, 150, 151, 153, 154, 155, 156,167, 172, 173, 180, 185, 195; C.I. Vat Yellow 1, 3, and 20.

Various colorants such as cyan-colored colorants, magenta-coloredcolorants, and yellow-colorant colorants may be employed singly or in acombination of two or more kinds, respectively. In this regard, in thecase where two or more kinds of various colorants such as cyan-coloredcolorants, magenta-colored colorants, and yellow-colorant colorants areused, the mixing ratio (or blending ratio) of these colorants is notparticularly restricted and can be suitably selected according to thekind of each colorant, an objective color, and the like.

In the case where the film 2 for semiconductor back surface is colored,the colored form is not particularly restricted. The film forsemiconductor back surface may be, for example, a single-layerfilm-shaped article added with a coloring agent. Moreover, the film maybe a laminated film where at least a resin layer formed of at least athermosetting resin and a coloring agent layer are laminated. In thisregard, in the case where the film 2 for semiconductor back surface is alaminated film of the resin layer and the coloring agent layer, the film2 for semiconductor back surface in the laminated form preferably has alaminated form of a resin layer/a coloring agent layer/a resin layer. Inthis case, two resin layers at both sides of the coloring agent layermay be resin layers having the same composition or may be resin layershaving different composition.

Into the film 2 for semiconductor back surface, other additives can besuitably blended according to the necessity. Examples of the otheradditives include an extender, an antiaging agent, an antioxidant, and asurfactant, in addition to a filler, a flame retardant, asilane-coupling agent, and an ion-trapping agent.

The filler may be any of an inorganic filler and an organic filler butan inorganic filler is suitable. By blending a filler such as aninorganic filler, imparting of electric conductivity to the film forsemiconductor back surface, improvement of the thermal conductivity,control of elastic modulus, and the like can be achieved. In thisregard, the film 2 for semiconductor back surface may be electricallyconductive or non-conductive. Examples of the inorganic filler includevarious inorganic powders composed of silica, clay, gypsum, calciumcarbonate, barium sulfate, alumina oxide, beryllium oxide, ceramics suchas silicone carbide and silicone nitride, metals or alloys such asaluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc,palladium, and solder, carbon, and the like. The filler may be employedsingly or in a combination of two or more kinds. Particularly, thefiller is suitably silica and more suitably fused silica. Herein, theaverage particle diameter of the inorganic filler is preferably within arange of from 0.1 μm to 80 μm. The average particle diameter of theinorganic filler can be measured, for example, by a laserdiffraction-type particle size distribution measurement apparatus.

The blending amount of the filler (particularly, inorganic filler) ispreferably 80 parts by weight or less (0 part by weight to 80 parts byweight), particularly preferably 0 part by weight to 70 parts by weightbased on 100 parts by weight of the organic resin components.

Examples of the flame retardant include antimony trioxide, antimonypentoxide, and brominated epoxy resins. The flame retardant may beemployed singly or in a combination of two or more kinds. Examples ofthe silane coupling agent includeβ-(3,4-epoxycyclohexyl)ethyltrimethoxysilane,γ-glycidoxypropyltrimethoxysilane, andγ-glycidoxypropylmethyldiethoxysilane. The silane coupling agent may beemployed singly or in a combination of two or more kinds. Examples ofthe ion-trapping agent include hydrotalcites and bismuth hydroxide. Theion-trapping agent may be employed singly or in a combination of two ormore kinds.

The film 2 for semiconductor back surface can be, for example, formed byutilizing a commonly used method including mixing a thermosetting resinsuch as an epoxy resin and, if necessary, a thermoplastic resin such asan acrylic resin and optional solvent and other additives to prepare aresin composition, followed by forming it to a film-shaped layer.Specifically, a film-shaped layer (adhesive layer) as the film forsemiconductor back surface can be formed, for example, by a methodincluding applying the resin composition on the pressure-sensitiveadhesive layer 32 of the dicing tape; a method including applying theresin composition on an appropriate separator (such as release paper) toform a resin layer (or an adhesive layer) and then transferring(transcribing) it on the pressure-sensitive adhesive layer 32; or thelike. In this regard, the resin composition may be a solution or adispersion.

Incidentally, in the case where the film 2 for semiconductor backsurface is formed of a resin composition containing a thermosettingresin such as an epoxy resin, the film for semiconductor back surface isin a state that the thermosetting resin is uncured or partially cured ata stage before the film is applied to a semiconductor wafer. In thiscase, after it is applied to the semiconductor wafer (specifically,usually, at the time when the encapsulating material is cured in theflip chip bonding step), the thermosetting resin in the film forsemiconductor back surface is completely or almost completely cured.

As above, since the film for semiconductor back surface is in a statethat the thermosetting resin is uncured or partially cured even when thefilm contains the thermosetting resin, the gel fraction of the film forsemiconductor back surface is not particularly restricted but is, forexample, suitably selected from the range of 50% by weight or less (0 to50% by weight) and is preferably 30% by weight or less (0 to 30% byweight) and particularly preferably 10% by weight or less (0 to 10% byweight). The gel fraction of the film for semiconductor back surface canbe measured by the following measuring method.

<Gel Fraction Measuring Method>

About 0.1 g of a sample is sampled from the film 2 for semiconductorback surface and precisely weighed (weight of sample) and, after thesample is wrapped in a mesh-type sheet, it is immersed in about 50 mL oftoluene at room temperature for 1 week. Thereafter, a solvent-insolublematter (content in the mesh-type sheet) is taken out of the toluene anddried at 130° C. for about 2 hours, the solvent-insoluble matter afterdrying is weighed (weight after immersion and drying), and a gelfraction (% by weight) is then calculated according to the followingexpression (a).Gel fraction (% by weight)=[(Weight after immersion and Drying)/(Weightof sample)]×100  (a)

The gel fraction of the film for semiconductor back surface can becontrolled by the kind and content of the resin components and the kindand content of the crosslinking agent and besides, heating temperature,heating time and the like.

In the invention, in the case where the film for semiconductor backsurface is a film-shaped article formed of a resin compositioncontaining a thermosetting resin such as an epoxy resin, closeadhesiveness to a semiconductor wafer can be effectively exhibited.

Incidentally, since cutting water is used in the dicing step of thesemiconductor wafer, the film for semiconductor back surface absorbsmoisture to have a moisture content of a normal state or more in somecases. When flip chip bonding is performed with still maintaining such ahigh moisture content, water vapor remains at the adhesion interfacebetween the film 2 for semiconductor back surface and the semiconductorwafer or its processed body (semiconductor) and lifting is generated insome cases. Therefore, by constituting the film for semiconductor backsurface as a configuration in which a core material having a highmoisture permeability is provided on each surface thereof, water vapordiffuses and thus it becomes possible to avoid such a problem. From sucha viewpoint, a multilayered structure in which the film 2 forsemiconductor back surface is formed at one surface or both surfaces ofthe core material may be used as the film for semiconductor backsurface. Examples of the core material include films (e.g., polyimidefilms, polyester films, polyethylene terephthalate films, polyethylenenaphthalate films, polycarbonate films, etc.), resin substratesreinforced with a glass fiber or a plastic nonwoven fiber, siliconsubstrates, and glass substrates.

The thickness (total thickness in the case of a laminated film) of thefilm 2 for semiconductor back surface is not particularly limited, butis preferably 10 μm to 40 μm, more preferably 20 μm to 30 μm. Bycontrolling the thickness of the film 2 for semiconductor back surfaceto 10 μm or more, the warp can be more effectively suppressed orprevented. Moreover, by controlling the thickness to 40 μm or less, thegeneration of the warp to the reverse side can be further suppressed orprevented. Also, by controlling the thickness to 40 μm or less, itbecomes possible to thin a semiconductor device composed of thesemiconductor element flip chip-mounted on the adherend.

The tensile storage elastic modulus of the film 2 for semiconductor backsurface in an uncured state at 23° C. is preferably 1 GPa or more (e.g.,1 GPa to 50 GPa), more preferably 2 GPa or more, and particularly, 3 GPaor more is suitable. When the tensile storage elastic modulus is 1 GPaor more, the attachment of the film for semiconductor back surface to asupport can be effectively suppressed or prevented at the time when thefilm 2 for semiconductor back surface is placed on the support andtransportation and the like are performed after the semiconductor chipis peeled from the pressure-sensitive adhesive layer 32 of the dicingtape together with the film 2 for semiconductor back surface. In thisregard, the support is, for example, a top tape, a bottom tape, and thelike in a carrier tape.

Here, the film 2 for semiconductor back surface may be either a singlelayer or a laminated film where a plurality of layers are laminated. Inthe case of the laminated film, the tensile storage elastic modulus at23° C. is sufficiently 1 GPa or more (e.g., 1 GPa to 50 GPa) as thewhole laminated film in an uncured state. Also the tensile storageelastic modulus (23° C.) of the film for semiconductor back surface inan uncured state can be controlled by suitably setting up the kind andcontent of the resin components (thermoplastic resin and/orthermosetting resin) or the kind and content of a filler such as asilica filler. In the case where the film 2 for semiconductor backsurface is a laminated film where a plurality of layers are laminated(in the case where the film for semiconductor back surface has a form ofthe laminated layer), as the laminated layer form, for example, alaminated form composed of a wafer adhesive layer and a laser markinglayer can be exemplified. Moreover, between the wafer adhesive layer andthe laser marking layer, other layers (an intermediate layer, alight-shielding layer, a reinforcing layer, a colored layer, a basematerial layer, an electromagnetic wave-shielding layer, a heatconductive layer, a pressure-sensitive adhesive layer, etc.) may beprovided. In this regard, the wafer adhesive layer is a layer whichexhibits an excellent close adhesiveness (adhesive property) to a waferand a layer which comes into contact with the back surface of a wafer.On the other hand, the laser marking layer is a layer which exhibits anexcellent laser marking property and a layer which is utilized at thelaser marking on the back surface of a semiconductor chip.

The tensile storage elastic modulus is determined by preparing the film2 for semiconductor back surface in an uncured state without laminationonto the dicing tape 3 and measuring elastic modulus in a tensile modeunder conditions of a sample width of 10 mm, a sample length of 22.5 mm,a sample thickness of 0.2 mm, a frequency of 1 Hz, and a temperatureelevating rate of 10° C./minute under a nitrogen atmosphere at aprescribed temperature (23° C.) using a dynamic viscoelasticitymeasuring apparatus “Solid Analyzer RS A2” manufactured by RheometricsCo. Ltd. and the measured elastic modulus is regarded as a value oftensile storage elastic modulus obtained.

The film 2 for semiconductor back surface after thermal curingpreferably has a tensile storage modulus at 23° C. of 1 GPa to 5 GPa,more preferably 1.5 GPa to 4.5 GPa, further preferably 2.0 GPa to 4.0GPa. When the tensile storage modulus after the thermal curing is 1 GPaor more, the warp can be more effectively suppressed or prevented.Moreover, when the tensile storage modulus after the thermal curing is 5GPa or less, the generation of the warp to the reverse side can befurther suppressed or prevented.

Here, although the film 2 for semiconductor back surface may be a singlelayer or may be a laminated film in which a plurality of layers arelaminated, in the case of the laminated film, the tensile storagemodulus at 23° C. after the thermal curing may falls within a range of 1GPa to 5 GPa as a whole of the laminated film. Also, the foregoingtensile storage modulus of the film for semiconductor back surface at23° C. after the thermal curing can be controlled by suitably setting upthe kind and content of the resin components (thermoplastic resin and/orthermosetting resin), the kind and content of a filler such as a silicafiller, and the like.

Incidentally, the tensile storage modulus at 23° C. after the thermalcuring is determined by preparing the thermally cured film 2 forsemiconductor back surface without lamination to the dicing tape 3 andmeasuring an elastic modulus in a tensile mode under conditions of asample width of 10 mm, a sample length of 22.5 mm, a sample thickness of0.2 mm, a frequency of 1 Hz and a temperature elevating rate of 10°C./min under a nitrogen atmosphere at a prescribed temperature (23° C.)using a dynamic viscoelasticity measuring apparatus “Solid Analyzer RSA2” manufactured by Rheometrics Co., Ltd. and is taken as a value ofobtained tensile storage modulus.

Preferably, the film 2 for semiconductor back surface is protected witha separator (release liner) on at least one surface thereof (not shownin figures). For example, in the dicing tape-integrated film 1 forsemiconductor back surface, a separator may be provided on at least onesurface of the film for semiconductor back surface. On the other hand,in the film for semiconductor back surface not integrated with a dicingtape, a separator may be provided on one surface or both surfaces of thefilm for semiconductor back surface. The separator has a function as aprotective material for protecting the film for semiconductor backsurface until it is practically used. Further, in the dicingtape-integrated film 1 for semiconductor back surface, the separator mayfurther serve as the supporting base material in transferring the film 2for semiconductor back surface onto the pressure-sensitive adhesivelayer 32 of the base material of the dicing tape. The separator ispeeled off when a semiconductor wafer is attached onto the film forsemiconductor back surface. As the separator, a film of polyethylene orpolypropylene, as well as a plastic film (such as polyethyleneterephthalate), a paper or the like whose surface is coated with areleasing agent such as a fluorine-based releasing agent or a long-chainalkyl acrylate-based releasing agent can also be used. The separator canbe formed by a conventionally known method. Moreover, the thickness orthe like of the separator is not particularly restricted.

In case where the film 2 for semiconductor back surface is not laminatedwith the dicing tape 3, the film 2 for semiconductor back surface may bewound up along with one separator having a release layer on both sidesthereof, into a roll in which the film 2 is protected with the separatorhaving a release layer on both surfaces thereof; or the film 2 may beprotected with a separator having a release layer on at least onesurface thereof.

Moreover, the light transmittance with a visible light (visible lighttransmittance, wavelength: 400 to 800 nm) in the film 2 forsemiconductor back surface is not particularly restricted but is, forexample, preferably in the range of 20% or less (0 to 20%), morepreferably 10% or less (0 to 10%), and particularly preferably 5% orless (0 to 5%). When the film 2 for semiconductor back surface has avisible light transmittance of more than 20%, there is a concern thatthe transmission of the light may adversely influence the semiconductorelement. The visible light transmittance (%) can be controlled by thekind and content of the resin components of the film 2 for semiconductorback surface, the kind and content of the coloring agent (such aspigment or dye), the content of the inorganic filer, and the like.

The visible light transmittance (%) of the film 2 for semiconductor backsurface can be determined as follows. Namely, a film 2 for semiconductorback surface having a thickness (average thickness) of 20 μm itself isprepared. Then, the film 2 for semiconductor back surface is irradiatedwith a visible light having a wavelength of 400 to 800 nm in aprescribed intensity [apparatus: a visible light generating apparatusmanufactured by Shimadzu Corporation [trade name “ABSORPTION SPECTROPHOTOMETER”], and the intensity of transmitted visible light ismeasured. Further, the visible light transmittance (%) can be determinedbased on intensity change before and after the transmittance of thevisible light through the film 2 for semiconductor back surface. In thisregard, it is also possible to derive visible light transmittance (%;wavelength: 400 to 800 nm) of the film 2 for semiconductor back surfacehaving a thickness of 20 μm from the value of the visible lighttransmittance (%; wavelength: 400 to 800 nm) of the film 2 forsemiconductor back surface whose thickness is not 20 μm. In theinvention, the visible light transmittance (%) is determined in the caseof the film 2 for semiconductor back surface having a thickness of 20μm, but the film for semiconductor back surface according to theinvention is not limited to one having a thickness of 20 μm.

Moreover, as the film 2 for semiconductor back surface, one having lowermoisture absorbance is more preferred. Specifically, the moistureabsorbance is preferably 1% by weight or less and more preferably 0.8%by weight or less. By regulating the moisture absorbance to 1% by weightor less, the laser marking property can be enhanced. Moreover, forexample, the generation of voids between the film 2 for semiconductorback surface and the semiconductor element can be suppressed orprevented in the reflow step. The moisture absorbance is a valuecalculated from a weight change before and after the film 2 forsemiconductor back surface is allowed to stand under an atmosphere of atemperature of 85° C. and a humidity of 85% RH for 168 hours. In thecase where the film 2 for semiconductor back surface is formed of aresin composition containing a thermosetting resin, the moistureabsorbance means a value obtained when the film after thermal curing isallowed to stand under an atmosphere of a temperature of 85° C. and ahumidity of 85% RH for 168 hours. Moreover, the moisture absorbance canbe regulated, for example, by changing the amount of the inorganicfiller to be added.

Moreover, as the film 2 for semiconductor back surface, one having asmaller ratio of volatile matter is more preferred. Specifically, theratio of weight decrease (weight decrease ratio) of the film 2 forsemiconductor back surface after heating treatment is preferably 1% byweight or less and more preferably 0.8% by weight or less. Theconditions for the heating treatment are, for example, a heatingtemperature of 250° C. and a heating time of 1 hour. By regulating theweight decrease ratio to 1% by weight or less, the laser markingproperty can be enhanced. Moreover, for example, the generation ofcracks in a flip chip type semiconductor device can be suppressed orprevented in the reflow step. The weight decrease ratio can beregulated, for example, by adding an inorganic substance capable ofreducing the crack generation at lead-free solder reflow. In the casewhere the film 2 for semiconductor back surface is formed of a resincomposition containing a thermosetting resin component, the weightdecrease ratio is a value obtained when the film for semiconductor backsurface after thermal curing is heated under conditions of a temperatureof 250° C. and a heating time of 1 hour.

(Dicing Tape)

The dicing tape 3 includes a base material 31 and a pressure-sensitiveadhesive layer 32 formed on the base material 31. Thus, it is sufficientthat the dicing tape 3 has a configuration in which the base material 31and the pressure-sensitive adhesive layer 32 are laminated. The basematerial (supporting base material) can be used as a supporting materialfor the pressure-sensitive adhesive layer and the like. The basematerial 31 preferably has a radiation ray-transmitting property. As thebase material 31, for example, suitable thin materials, e.g.,paper-based base materials such as paper; fiber-based base materialssuch as fabrics, non-woven fabrics, felts, and nets; metal-based basematerials such as metal foils and metal plates; plastic base materialssuch as plastic films and sheets; rubber-based base materials such asrubber sheets; foamed bodies such as foamed sheets; and laminatesthereof [particularly, laminates of plastic based materials with otherbase materials, laminates of plastic films (or sheets) each other, etc.]can be used. In the invention, as the base material, plastic basematerials such as plastic films and sheets can be suitably employed.Examples of raw materials for such plastic materials include olefinicresins such as polyethylene (PE), polypropylene (PP), andethylene-propylene copolymers; copolymers using ethylene as a monomercomponent, such as ethylene-vinyl acetate copolymers (EVA), ionomerresins, ethylene-(meth)acrylic acid copolymers, andethylene-(meth)acrylic acid ester (random, alternating) copolymers;polyesters such as polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), and polybutylene terephthalate (PBT); acrylic resins;polyvinyl chloride (PVC); polyurethanes; polycarbonates; polyphenylenesulfide (PPS); amide-based resins such as polyamides (Nylon) and wholearomatic polyamides (aramide); polyether ether ketones (PEEK);polyimides; polyetherimides; polyvinylidene chloride; ABS(acrylonitrile-butadiene-styrene copolymers); cellulose-based resins;silicone resins; and fluorinated resins.

In addition, the materials for the base material 31 include polymerssuch as crosslinked materials of the foregoing resins. The plastic filmsmay be used without stretching or may be used after subjected to auniaxial or biaxial stretching treatment, if necessary. According to theresin sheet to which thermal contraction property is imparted by astretching treatment or the like, the adhered area between thepressure-sensitive adhesive layer 32 and the film for semiconductor backsurface 2 is reduced by thermal contraction of the base material 31after dicing and thus the recovery of the semiconductor chip can befacilitated.

A commonly used surface treatment, e.g., a chemical or physicaltreatment such as a chromate treatment, ozone exposure, flame exposure,exposure to high-voltage electric shock, or an ionized radiationtreatment, or a coating treatment with an undercoating agent e.g., apressure-sensitive adhesive substance to be mentioned later) may beapplied onto the surface of the base material 31 in order to enhanceclose adhesiveness with the adjacent layer, holding properties, and thelike.

As the base material 31, the same kind or different kinds of materialscan be suitably selected and used and, if necessary, several kinds ofmaterials can be blended and used. Moreover, to the base material 31,for imparting antistatic ability, a vapor deposition layer of aconductive substance having a thickness of about 30 to 500 angstrom,which is composed of a metal, alloy or an oxide thereof, can be formedon the base material 31. The base material 31 may be a single layer or amultilayer of two or more thereof.

The thickness (total thickness in the case of the laminated layer) ofthe base material 31 is not particularly restricted and can beappropriately selected depending on strength, flexibility, intendedpurpose of use, and the like. For example, the thickness is generally1,000 μm or less (e.g., 1 μm to 1,000 μm), preferably 10 μm to 500 μm,further preferably 20 μm to 300 μm, and particularly preferably about 30μm to 200 μm but is not limited thereto.

Incidentally, the base material 31 may contain various additives (acoloring agent, a filler, a plasticizer, an antiaging agent, anantioxidant, a surfactant, a flame retardant, etc.) within the rangewhere the advantages and the like of the invention are not impaired.

The pressure-sensitive adhesive layer 32 is formed of apressure-sensitive adhesive and has a pressure-sensitive adhesiveness.Not specifically defined, the pressure-sensitive adhesive may besuitably selected from known pressure-sensitive adhesives. Concretely,as the pressure-sensitive adhesive, for example, those having theabove-mentioned characteristics are suitably selected from knownpressure-sensitive adhesives such as acrylic pressure-sensitiveadhesives, rubber-based pressure-sensitive adhesives, vinyl alkylether-based pressure-sensitive adhesives, silicone-basedpressure-sensitive adhesives, polyester-based pressure-sensitiveadhesives, polyamide-based pressure-sensitive adhesives, urethane-basedpressure-sensitive adhesives, fluorine-based pressure-sensitiveadhesives, styrene-diene block copolymer-based pressure-sensitiveadhesives, and creep characteristics-improved pressure-sensitiveadhesives prepared by incorporating a thermofusible resin having amelting point of not higher than 200° C. to the above-mentionedpressure-sensitive adhesive (for example, see JP-A 56-61468,JP-A-61-174857, JP-A-63-17981, JP-A-56-13040, herein incorporated byreference), and are used herein. As the pressure-sensitive adhesive,also usable here are radiation-curable pressure-sensitive adhesives (orenergy ray-curable pressure-sensitive adhesives) and thermallyexpandable pressure-sensitive adhesives. One or more suchpressure-sensitive adhesives may be used here either singly or ascombined.

As the pressure-sensitive adhesive, preferred for use herein are acrylicpressure-sensitive adhesives and rubber-based pressure-sensitiveadhesives, and more preferred are acrylic pressure-sensitive adhesives.Examples of the acrylic pressure-sensitive adhesives include thosecomprising, as the base polymer, an acrylic polymer (homopolymer orcopolymer) of one or more alkyl(meth)acrylates as monomer component(s).

The alkyl(meth)acrylate for the acrylic pressure-sensitive adhesiveincludes, for example, methyl(meth)acrylate, ethyl(meth)acrylate, propyl(meth)acrylate, isopropyl(meth)acrylate, butyl(meth)acrylate,isobutyl(meth)acrylate, s-butyl(meth)acrylate, t-butyl(meth)acrylate,pentyl(meth)acrylate, hexyl (meth)acrylate, heptyl(meth)acrylate,octyl(meth)acrylate, 2-ethylhexyl(meth)acrylate, isooctyl(meth)acrylate,nonyl(meth)acrylate, isononyl(meth)acrylate, decyl (meth)acrylate,isodecyl(meth)acrylate, undecyl(meth)acrylate, dodecyl (meth)acrylate,tridecyl(meth)acrylate, tetradecyl(meth)acrylate, pentadecyl(meth)acrylate, hexadecyl(meth)acrylate, heptadecyl(meth)acrylate,octadecyl (meth)acrylate, nonadecyl(meth)acrylate,eicosyl(meth)acrylate, etc. As the alkyl (meth)acrylate, preferred arethose in which the alkyl group has from 4 to 18 carbon atoms. In thealkyl(meth)acrylate, the alkyl group may be linear or branched.

The acrylic polymer may contain, if desired, a unit corresponding to anyother monomer component copolymerizable with the above-mentioned alkyl(meth)acrylate (copolymerizable monomer component), for the purpose ofimproving the cohesive force, the heat resistance and thecrosslinkability thereof. The copolymerizable monomer componentincludes, for example, carboxyl group-containing monomers such as(meth)acrylic acid (acrylic acid, methacrylic acid), carboxyethylacrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaricacid, crotonic acid; acid anhydride group-containing monomers such asmaleic anhydride, itaconic anhydride; hydroxyl group-containing monomerssuch as hydroxyethyl (meth)acrylate, hydroxypropyl(meth)acrylate,hydroxybutyl(meth)acrylate, hydroxyhexyl(meth)acrylate,hydroxyoctyl(meth)acrylate, hydroxydecyl (meth)acrylate,hydroxylauryl(meth)acrylate, (4-hydroxymethylcyclohexyl)methylmethacrylate; sulfonic acid group-containing monomers such asstyrenesulfonic acid, allylsulfonic acid,2-(meth)acrylamide-2-methylpropanesulfonic acid,(meth)acrylamide-propanesulfonic acid, sulfopropyl(meth)acrylate,(meth)acryloyloxynaphthalenesulfonic acid; phosphoric acidgroup-containing monomers such as 2-hydroxyethyl acryloylphosphate;(N-substituted) amide monomers such as (meth)acrylamide,N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide,N-methylol(meth)acrylamide, N-methylolpropane(meth)acrylamide;aminoalkyl (meth)acrylate monomers such as aminoethyl(meth)acrylate,N,N-dimethylaminoethyl (meth)acrylate, t-butylaminoethyl(meth)acrylate;alkoxyalkyl(meth)acrylate monomers such as methoxyethyl(meth)acrylate,ethoxyethyl(meth)acrylate; cyanoacrylate monomers such as acrylonitrile,methacrylonitrile; epoxy group-containing acrylic monomers such asglycidyl(meth)acrylate; styrene monomers such as styrene,α-methylstyrene; vinyl ester monomers such as vinyl acetate, vinylpropionate; olefin monomers such as isoprene, butadiene, isobutylene;vinyl ether monomers such as vinyl ether; nitrogen-containing monomerssuch as N-vinylpyrrolidone, methylvinylpyrrolidone, vinylpyridine,vinylpiperidone, vinylpyrimidine, vinylpiperazine, vinylpyrazine,vinylpyrrole, vinylimidazole, vinyloxazole, vinylmorpholine,N-vinylcarbonamides, N-vinylcaprolactam; maleimide monomers such asN-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide,N-phenylmaleimide; itaconimide monomers such as N-methylitaconimide,N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide,N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, N-laurylitaconimide;succinimide monomers such as N-(meth)acryloyloxymethylenesuccinimide,N-(meth)acryloyl-6-oxyhexamethylenesuccinimide,N-(meth)acryloyl-8-oxyoctamethylenesuccinimide; acryl glycolate monomerssuch as polyethylene glycol (meth)acrylate, polypropylene glycol(meth)acrylate, methoxyethylene glycol (meth)acrylate,methoxypolypropylene glycol (meth)acrylate; acrylate monomers having ahetero ring, a halogen atom, a silicone atom or the like such astetrahydrofurfuryl(meth)acrylate, fluoro(meth)acrylate, silicone(meth)acrylate; polyfunctional monomers such as hexanedioldi(meth)acrylate, (poly)ethylene glycol di(meth)acrylate,(poly)propylene glycol di(meth)acrylate, neopentylglycoldi(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropanetri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritolhexa(meth)acrylate, epoxyacrylate, polyester acrylate, urethaneacrylate, divinylbenzene, butyl di(meth)acrylate, hexyldi(meth)acrylate, etc. One or more these copolymerizable monomercomponents may be used here either singly or as combined.

The radiation-curable pressure-sensitive adhesive (or energy ray-curablepressure-sensitive adhesive) (composition) usable in the inventionincludes, for example, an internal-type radiation-curablepressure-sensitive adhesive comprising, as the base polymer, a polymerhaving a radical-reactive carbon-carbon double bond in the polymer sidechain, main chain or main chain terminal, and a radiation-curablepressure-sensitive adhesive prepared by incorporating a UV-curablemonomer component or oligomer component in a pressure-sensitiveadhesive. The thermally expandable pressure-sensitive adhesive alsousable here includes, for example, those comprising a pressure-sensitiveadhesive and a foaming agent (especially thermally expandablemicrospheres).

In the invention, the pressure-sensitive adhesive layer 32 may containvarious additives (e.g., a tackifying resin, a coloring agent, athickener, an extender, a filler, a plasticizer, an antiaging agent, anantioxidant, a surfactant, a crosslinking agent, etc.) within the rangewhere the advantages of the invention are not impaired.

The crosslinking agent is not particularly restricted and knowncrosslinking agents can be used. Specifically, as the crosslinkingagent, not only isocyanate-based crosslinking agents, epoxy-basedcrosslinking agents, melamine-based crosslinking agents, andperoxide-based crosslinking agents but also urea-based crosslinkingagents, metal alkoxide-based crosslinking agents, metal chelate-basedcrosslinking agents, metal salt-based crosslinking agents,carbodiimide-based crosslinking agents, oxazoline-based crosslinkingagents, aziridine-based crosslinking agents, amine-based crosslinkingagents, and the like may be mentioned, and isocyanate-based crosslinkingagents and epoxy-based crosslinking agents are suitable. Thecrosslinking agent may be employed singly or in a combination of two ormore kinds. Incidentally, the amount of the crosslinking agent to beused is not particularly restricted.

Examples of the isocyanate-based crosslinking agents include loweraliphatic polyisocyanates such as 1,2-ethylene diisocyanate,1,4-butylene diisocyanate, and 1,6-hexamethylene diisocyanate; alicyclicpolyisocyanates such as cyclopentylene diisocyanate, cyclohexylenediisocyanate, isophorone diisocyanate, hydrogenated tolylenediisocyanate, and hydrogenated xylylene diisocyanate; and aromaticpolyisocyanates such as 2,4-tolylene diisocyanate, 2,6-tolylenediisocyanate, 4,4′-diphenylmethane diisocyanate, and xylylenediisocyanate. In addition, a trimethylolpropane/tolylene diisocyanatetrimer adduct [a trade name “COLONATE L” manufactured by NipponPolyurethane Industry Co., Ltd.], a trimethylolpropane/hexamethylenediisocyanate trimer adduct [a trade name “COLONATE HL” manufactured byNippon Polyurethane Industry Co., Ltd.], and the like are also used.Moreover, examples of the epoxy-based crosslinking agents includeN,N,N′,N′-tetraglycidyl-m-xylenediamine, diglycidylaniline,1,3-bis(N,N-glycidylaminomethyl)cyclohexane, 1,6-hexanediol diglycidylether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidylether, propylene glycol diglycidyl ether, polyethylene glycol diglycidylether, polypropylene glycol diglycidyl ether, sorbitol polyglycidylether, glycerol polyglycidyl ether, pentaerythritol polyglycidyl ether,polyglycerol polyglycidyl ether, sorbitan polyglycidyl ether,trimethylolpropnane polyglycidyl ether, adipic acid diglycidyl ester,o-phthalic acid diglycidyl ester, triglycidyl-tris(2-hydroxyethyl)isocyanurate, resorcin diglycidyl ether, and bisphenol-S-diglycidylether, and also epoxy-based resins having two or more epoxy groups inthe molecule.

In place of using the crosslinking agent or along with the crosslinkingagent in the invention, the pressure-sensitive adhesive layer may becrosslinked through irradiation with electron rays or UV rays.

The pressure-sensitive adhesive layer 32 can be, for example, formed byutilizing a commonly used method including mixing a pressure-sensitiveadhesive and optional solvent and other additives and then shaping themixture into a sheet-like layer. Specifically, for example, there may bementioned a method including applying a mixture containing apressure-sensitive adhesive and optional solvent and other additives onthe base material 31; a method including applying the foregoing mixtureon an appropriate separator (such as a release paper) to form apressure-sensitive adhesive layer 32 and then transferring(transcribing) it on the base material 31; or the like.

Not specifically defined, the thickness of the pressure-sensitiveadhesive layer 32 may be, for example, from 5 μm to 300 μm (preferablyfrom 5 μm to 200 μm, more preferably from 5 μm to 100 μM, even morepreferably from 7 μm to 50 μm) or so. When the thickness of thepressure-sensitive adhesive layer 32 falls within the range, then thelayer can exhibit a suitable pressure-sensitive adhesive force. Thepressure-sensitive adhesive layer 32 may be a single layer or amultilayer.

The adhesive force of the pressure-sensitive adhesive layer 32 of thedicing tape 3 to the film 2 for flip chip type semiconductor backsurface (23° C., peeling angle of 180 degrees, peeling rate of 300mm/min) is preferably within a range of from 0.02 N/20 mm to 10 N/20 mm,more preferably from 0.05 N/20 mm to 5 N/20 mm. When the adhesive forceis at least 0.02 N/20 mm, then the semiconductor chips may be preventedfrom flying away in dicing semiconductor wafer. On the other hand, whenthe adhesive force is at most 10 N/20 mm, then it facilitates peeling ofsemiconductor chips in picking up them, and prevents thepressure-sensitive adhesive from remaining

Incidentally, in the invention, the film 2 for flip-chip typesemiconductor back surface or the dicing tape-integrated film 1 forsemiconductor back surface can be made to have an antistatic function.Owing to this configuration, the circuit can be prevented from breakingdown due to the generation of electrostatic energy at the time adhesionand at the time of peeling thereof or due to charging of a semiconductorwafer or the like by the electrostatic energy. Imparting of theantistatic function can be performed by an appropriate manner such as amethod of adding an antistatic agent or a conductive substance to thebase material 31, the pressure-sensitive adhesive layer 32, and the film2 for semiconductor back surface, or a method of providing a conductivelayer composed of a charge-transfer complex, a metal film, or the likeonto the base material 31. As these methods, a method in which animpurity ion having a fear of changing quality of the semiconductorwafer is difficult to generate is preferable. Examples of the conductivesubstance (conductive filler) to be blended for the purpose of impartingconductivity, improving thermal conductivity, and the like include asphere-shaped, a needle-shaped, or a flake-shaped metal powder ofsilver, aluminum, gold, copper, nickel, a conductive alloy, or the like;a metal oxide such as alumina; amorphous carbon black, and graphite.However, the film 2 for semiconductor back surface is preferablynon-conductive from the viewpoint of having no electric leakage.

Moreover, the film 2 for flip-chip type semiconductor back surface orthe dicing tape-integrated film 1 for semiconductor back surface may beformed in a form where it is wound as a roll or may be formed in a formwhere the sheet (film) is laminated. For example, in the case where thefilm has the form where it is wound as a roll, the film is wound as aroll in a state that the film 2 for semiconductor back surface or thelaminate of the film 2 for semiconductor back surface and the dicingtape 3 is protected by a separator according to needs, whereby the filmcan be prepared as a film 2 for semiconductor back surface or a dicingtape-integrated film 1 for semiconductor back surface in a state or formwhere it is wound as a roll. In this regard, the dicing tape-integratedfilm 1 for semiconductor back surface in the state or form where it iswound as a roll may be constituted by the base material 31, thepressure-sensitive adhesive layer 32 formed on one surface of the basematerial 31, the film 2 for semiconductor back surface formed on thepressure-sensitive adhesive layer 32, and a releasably treated layer(rear surface treated layer) formed on the other surface of the basematerial 31.

Incidentally, the thickness of the dicing tape-integrated film 1 forsemiconductor back surface (total thickness of the thickness of the filmfor semiconductor back surface and the thickness of the dicing tapeincluding the base material 31 and the pressure-sensitive adhesive layer32) can be, for example, selected from the range of 8 μm to 1,500 μm,and it is preferably from 20 μm to 850 μm, more preferably 31 μm to 500μm, and particularly preferably 47 μm to 330 μm.

In this regard, in the dicing tape-integrated film 1 for semiconductorback surface, by controlling the ratio of the thickness of the film 2for semiconductor back surface to the thickness of thepressure-sensitive adhesive layer 32 of the dicing tape 3 or the ratioof the thickness of the film 2 for semiconductor back surface to thethickness of the dicing tape (total thickness of the base material 31and the pressure-sensitive adhesive layer 32), a dicing property at thedicing step, a picking-up property at the picking-up step, and the likecan be improved and the dicing tape-integrated film 1 for semiconductorback surface can be effectively utilized from the dicing step of thesemiconductor wafer to the flip chip bonding step of the semiconductorchip.

(Producing Method of Dicing Tape-Integrated Film for Semiconductor BackSurface)

The producing method of the dicing tape-integrated film forsemiconductor back surface according to the present embodiment isdescribed while using the dicing tape-integrated film 1 forsemiconductor back surface shown in FIG. 1 as an example. First, thebase material 31 can be formed by a conventionally known film-formingmethod. Examples of the film-forming method include a calendarfilm-forming method, a casting method in an organic solvent, aninflation extrusion method in a closely sealed system, a T-die extrusionmethod, a co-extrusion method, and a dry laminating method.

Next, the pressure-sensitive adhesive composition is applied to the basematerial 31 and dried thereon (and optionally crosslinked under heat) toform the pressure-sensitive adhesive layer 32. The coating systemincludes roll coating, screen coating, gravure coating, etc. Thepressure-sensitive adhesive composition may be directly applied to thebase material 31 to form the pressure-sensitive adhesive layer 32 on thebase material 31; or the pressure-sensitive adhesive composition may beapplied to a release sheet or the like of which the surface has beenprocessed for lubrication, to form the pressure-sensitive adhesive layer32 thereon, and the pressure-sensitive adhesive layer 32 may betransferred onto the base material 31. With that, the dicing tape 3 isformed having the pressure-sensitive adhesive layer 32 formed on thebase material 31.

On the other hand, a coated layer is formed by applying a formingmaterial for forming the film 2 for semiconductor back surface onto arelease paper so as to have a prescribed thickness after drying andfurther drying under prescribed conditions (in the case that thermalcuring is necessary, performing a heating treatment and drying accordingto needs). The film 2 for semiconductor back surface is formed on thepressure-sensitive adhesive layer 32 by transferring the coated layeronto the pressure-sensitive adhesive layer 32. In this regard, the film2 for semiconductor back surface can be also formed on thepressure-sensitive adhesive layer 32 by directly applying the formingmaterial for forming the film 2 for semiconductor back surface onto thepressure-sensitive adhesive layer 32, followed by drying underprescribed conditions (in the case that thermal curing is necessary,performing a heating treatment and drying according to needs).Consequently, the dicing tape-integrated film 1 for semiconductor backsurface according to the invention can be obtained. Incidentally, in thecase that thermal curing is performed at the formation of the film 2 forsemiconductor back surface, it is important to perform the thermalcuring to such a degree that a partial curing is achieved butpreferably, the thermal curing is not performed.

The dicing tape-integrated film 1 for semiconductor back surface of theinvention can be suitably used at the production of a semiconductordevice including the flip chip connection step. Namely, the dicingtape-integrated film 1 for semiconductor back surface of the inventionis used at the production of a flip chip-mounted semiconductor deviceand thus the flip chip-mounted semiconductor device is produced in acondition or form where the film 2 for semiconductor back surface of thedicing tape-integrated film 1 for semiconductor back surface is attachedto the back surface of the semiconductor chip. Therefore, the dicingtape-integrated film 1 for semiconductor back surface of the inventioncan be used for a flip chip-mounted semiconductor device (asemiconductor device in a state or form where the semiconductor chip isfixed to an adherend such as a substrate by a flip chip bonding method).

The film 2 for semiconductor back surface is usable also for flipchip-mounted semiconductor devices (semiconductor devices in a state orform where a semiconductor chip is fixed to the adherend such as asubstrate or the like in a flip chip bonding method), like in the dicingtape-integrated film 1 for semiconductor back surface.

(Semiconductor Wafer)

The semiconductor wafer is not particularly restricted as long as it isa known or commonly used semiconductor wafer and can be appropriatelyselected and used among semiconductor wafers made of various materials.In the invention, as the semiconductor wafer, a silicon wafer can besuitable used.

(Production Process of Semiconductor Device)

The process for producing a semiconductor device according to theinvention will be described referring to FIGS. 2A to 2D. FIGS. 2A to 2Dare cross-sectional schematic views showing a process for producing asemiconductor device in the case where a dicing tape-integrated film 1for semiconductor back surface is used.

According to the semiconductor device production method, a semiconductordevice can be produced using the dicing tape-integrated film 1 forsemiconductor back surface. Concretely, the method comprises a step ofattaching a semiconductor wafer onto the dicing tape-integrated film forsemiconductor back surface, a step of dicing the semiconductor wafer, astep of picking up the semiconductor element obtained by dicing, and astep of flip chip-connecting the semiconductor element onto an adherend.

Incidentally, when using the film 2 for semiconductor back surface, asemiconductor device can also be produced according to the semiconductordevice production method of using the dicing tape-integrated film 1 forsemiconductor back surface. For example, the film 2 for semiconductorback surface is attached to and integrated with a dicing tape to preparea dicing tape-integrated film for semiconductor back surface, and asemiconductor device can be produced using the dicing tape-integratedfilm. In this case, the semiconductor device production method of usingthe film 2 for semiconductor back surface comprises the stepsconstituting the semiconductor device production method of using adicing tape-integrated film for semiconductor back surface mentionedabove, and, as combined therewith, an additional step of attaching afilm for semiconductor back surface and a dicing tape in such a mannerthat the film for semiconductor back surface could be in contact withthe pressure-sensitive adhesive layer of the dicing tape.

Alternatively, the film 2 for semiconductor back surface may be used bybeing directly attached to a semiconductor wafer without integrated witha dicing tape. In this case, the semiconductor device production methodof using the film 2 for semiconductor back surface comprises a step ofattaching a film for semiconductor back surface to a semiconductor waferfollowed by a step of attaching a dicing tape to the film forsemiconductor back surface with the semiconductor wafer attachedthereto, in such a manner that the film for semiconductor back surfacecould be in contact with the pressure-sensitive adhesive layer of thedicing tape, in place of the step of attaching a semiconductor waferonto a dicing tape-integrated film for semiconductor back surface in thesemiconductor device production method of using a dicing tape-integratedfilm for semiconductor back surface mentioned above.

In another application embodiment thereof, the film 2 for semiconductorback surface may be directly attached to the semiconductor chip preparedby dicing a semiconductor wafer into individual semiconductor chips. Inthis case, the semiconductor device production method of using the film2 for semiconductor back surface comprises, for example, at least a stepof attaching a dicing tape to a semiconductor wafer, a step of dicingthe semiconductor wafer, a step of picking up the semiconductor elementobtained by the dicing, a step of flip chip-connecting the semiconductorelement onto an adherend, and a step of attaching a film forsemiconductor back surface to the semiconductor element.

(Mounting Step)

First, as shown in FIG. 2A, a separator optionally provided on the film2 for semiconductor back surface of the dicing tape-integrated film 1for semiconductor back surface is suitably peeled off and thesemiconductor wafer 4 is attached onto the film 2 for semiconductor backsurface to be fixed by adhesion and holding (mounting step). On thisoccasion, the film 2 for semiconductor back surface is in an uncuredstate (including a semi-cured state). Moreover, the dicingtape-integrated film 1 for semiconductor back surface is attached to theback surface of the semiconductor wafer 4. The back surface of thesemiconductor wafer 4 means a face opposite to the circuit face (alsoreferred to as non-circuit face, non-electrode-formed face, etc.). Theattaching method is not particularly restricted but a method by pressbonding is preferred. The press bonding is usually performed whilepressing with a pressing means such as a pressing roll.

(Dicing Step)

Next, as shown in FIG. 2B, the semiconductor wafer 4 is diced. Thereby,the semiconductor wafer 4 is cut into a prescribed size andindividualized (is formed into small pieces) to produce semiconductorchips 5. The dicing is performed according to a normal method from thecircuit face side of the semiconductor wafer 4, for example. Moreover,the present step can adopt, for example, a cutting method calledfull-cut that forms a slit reaching the dicing tape-integrated film 1for semiconductor back surface. The dicing apparatus used in the presentstep is not particularly restricted, and a conventionally knownapparatus can be used. Further, since the semiconductor wafer 4 isadhered and fixed by the dicing tape-integrated film 1 for semiconductorback surface having the film for semiconductor back surface, chip crackand chip fly can be suppressed, as well as the damage of thesemiconductor wafer 4 can also be suppressed. In this regard, when thefilm 2 for semiconductor back surface is formed of a resin compositioncontaining an epoxy resin, generation of adhesive extrusion from theadhesive layer of the film for semiconductor back surface can besuppressed or prevented at the cut surface even when it is cut bydicing. As a result, re-attachment (blocking) of the cut surfacesthemselves can be suppressed or prevented and thus the picking-up to bementioned below can be further conveniently performed.

In the case where the dicing tape-integrated film 1 for semiconductorback surface is expanded, the expansion can be performed using aconventionally known expanding apparatus. The expanding apparatus has adoughnut-shaped outer ring capable of pushing the dicing tape-integratedfilm 1 for semiconductor back surface downward through a dicing ring andan inner ring which has a diameter smaller than the outer ring andsupports the dicing tape-integrated film for semiconductor back surface.Owing to the expanding step, it is possible to prevent the damage ofadjacent semiconductor chips through contact with each other in thepicking-up step to be mentioned below.

(Picking-Up Step)

In order to collect the semiconductor chip 5 that is adhered and fixedto the dicing tape-integrated film 1 for semiconductor back surface,picking-up of the semiconductor chip 5 is performed as shown in FIG. 2Cto peel the semiconductor chip 5 together with the film 2 forsemiconductor back surface from the dicing tape 3. The method ofpicking-up is not particularly restricted, and conventionally knownvarious methods can be adopted. For example, there may be mentioned amethod including pushing up each semiconductor chip 5 from the basematerial 31 side of the dicing tape-integrated film 1 for semiconductorback surface with a needle and picking-up the pushed semiconductor chip5 with a picking-up apparatus. In this regard, the back surface of thepicked-up semiconductor chip 5 is protected with the film 2 forsemiconductor back surface.

(Flip Chip Connecting Step)

The picked-up semiconductor chip 5 is fixed on an adherend such as asubstrate according to a flip chip bonding method (flip chip mountingmethod), as shown in FIG. 2D. Concretely, the semiconductor chip 5 isfixed on the adherend 6 according to an ordinary method in such a mannerthat the circuit face of the semiconductor chip 5 (this may be referredto as a front surface, a circuit pattern formed surface or an electrodeformed surface) could face the adherend 6. For example, while the bump51 formed on the circuit surface side of the semiconductor chip 5 ispressed against the bonding conductive material (e.g., solder) 61attached to the connecting pad of the adherend 6, the conductivematerial is melted to secure the electric connection between thesemiconductor chip 5 and the adherend 6 and the semiconductor chip 5 isthereby fixed to the adherend 6 (flip chip-bonding step). In this case,gaps are formed between the semiconductor chip 5 and the adherend 6, andthe gap distance may be generally from 30 μm to 300 μm or so. After thesemiconductor chip 5 has been flip chip-bonded (flip chip-connected)onto the adherend 6, it is important that the interface and the gapsbetween the semiconductor chip 5 and the adherend 6 are cleaned up andthe two are sealed up by filling the gaps with an encapsulating material(e.g., encapsulating resin).

As the adherend 6, various substrates such as lead frames and circuitboards (such as wiring circuit boards) can be used. The material of thesubstrates is not particularly restricted and there may be mentionedceramic substrates and plastic substrates. Examples of the plasticsubstrates include epoxy substrates, bismaleimide triazine substrates,and polyimide substrates.

In the flip chip bonding step, the material of the bump and theconductive material is not particularly restricted and examples thereofinclude solders (alloys) such as tin-lead-based metal materials,tin-silver-based metal materials, tin-silver-copper-based metalmaterials, tin-zinc-based metal materials, and tin-zinc-bismuth-basedmetal materials, and gold-based metal materials and copper-based metalmaterials.

Incidentally, in the flip chip bonding step, the conductive material ismelted to connect the bump at the circuit face side of the semiconductorchip 5 and the conductive material on the surface of the adherend 6. Thetemperature at the melting of the conductive material is usually about260° C. (e.g., 250° C. to 300° C.). The dicing tape-integrated film forsemiconductor back surface of the invention can be made to have thermalresistance capable of enduring the high temperature in the flip chipbonding step by forming the film for semiconductor back surface with anepoxy resin or the like.

In the present step, it is preferred to wash the opposing face(electrode-formed face) between the semiconductor chip 5 and theadherend 6 and the gaps. The washing liquid to be used at the washing isnot particularly restricted and examples thereof include organic washingliquids and aqueous washing liquids. The film for semiconductor backsurface in the dicing tape-integrated film for semiconductor backsurface of the invention has solvent resistance against the washingliquid and has substantially no solubility to these washing liquid.Therefore, as mentioned above, various washing liquids can be employedas the washing liquid and the washing can be achieved by anyconventional method without requiring any special washing liquid.

Next, an encapsulating step for encapsulating the gap between the flipchip bonded semiconductor chip 5 and the adherend 6 is performed. Theencapsulating step is performed using an encapsulating resin. Theconditions for the encapsulation on this occasion is not particularlylimited but usually, thermal curing (reflow) of the encapsulating resinis performed by heating at 175° C. for 60 seconds to 90 seconds. In theinvention, the curing is not limited thereto and can be, for example,performed at 165° C. to 185° C. for several minutes. In the heattreatment in this step, thermal curing of not only the encapsulatingresin but also the film 2 for semiconductor back surface is performedsimultaneously. Thereby, both of the encapsulating resin and the film 2for semiconductor back surface are cured and contracted with theprogress of the thermal curing. As a result, the stress applied to thesemiconductor chip 5 originating from the curing and contraction of theencapsulating resin can be offset or alleviated by the curing andcontraction of the film 2 for semiconductor back surface. Moreover, bythis step, the film 2 for semiconductor back surface can be completelyor almost completely thermally cured and can be attached to the backsurface of the semiconductor element with excellent adhesiveness.Furthermore, since the film 2 for semiconductor back surface accordingto the invention can be thermally cured together with the encapsulatingmaterial at the encapsulating step even when the film is in an uncuredstate, it is not necessary to add a new step for thermally curing thefilm 2 for semiconductor back surface.

The encapsulating resin is not particularly restricted as long as thematerial is a resin having an insulating property (an insulating resin)and may be suitably selected and used among known encapsulatingmaterials such as encapsulating resins. The encapsulating resin ispreferably an insulating resin having elasticity. Examples of theencapsulating resin include resin compositions containing an epoxyresin. As the epoxy resin, there may be mentioned the epoxy resinsexemplified in the above. Furthermore, the encapsulating resin composedof the resin composition containing an epoxy resin may contain athermosetting resin other than an epoxy resin (such as a phenol resin)or a thermoplastic resin in addition to the epoxy resin. Incidentally, aphenol resin can be utilized also as a curing agent for the epoxy resinand, as such a phenol resin, there may be mentioned phenol resinsexemplified in the above.

According to the semiconductor device (flip chip-mounted semiconductordevice) manufactured using the dicing tape-integrated film 1 forsemiconductor back surface or the film 2 for semiconductor back surface,the film for semiconductor back surface is attached to the back surfaceof the semiconductor chip, and therefore, laser marking can be appliedwith excellent visibility. In particular, even when the marking methodis a laser marking method, laser marking can be applied with anexcellent contrast ratio, and it is possible to observe various kinds ofinformation (for example, literal information and graphical information)applied by laser marking with good visibility. At the laser marking, aknown laser marking apparatus can be utilized. Moreover, as the laser,it is possible to utilize various lasers such as a gas laser, asolid-state laser, and a liquid laser. Specifically, as the gas laser,any known gas lasers can be utilized without particular limitation but acarbon dioxide laser (CO₂ laser) and an excimer laser (ArF laser, KrFlaser, XeCl laser, XeF laser, etc.) are suitable. As the solid-statelaser, any known solid-state lasers can be utilized without particularlimitation but a YAG laser (such as Nd:YAG laser) and a YVO₄ laser aresuitable.

After the laser marking of the film 2 for semiconductor back surface, aheat treatment (reflow step to be performed after the laser marking) maybe performed according to need. Conditions for the heat treatment arenot particularly limited, but it can be performed in accordance with thestandard of JEDEC Solid State Technology Association (JEDEC). Forexample, it can be performed at a temperature (upper limit) within arange of 210 to 270° C. for a time within a range of 5 to 50 seconds. Bythis step, the semiconductor package can be mounted on a substrate (suchas a mother board).

Since the semiconductor device produced using the dicing tape-integratedfilm for semiconductor back surface 1 or the film for semiconductor backsurface 2 of the invention is a semiconductor device mounted by the flipchip mounting method, the device has a thinned and miniaturized shape ascompared with a semiconductor device mounted by a die-bonding mountingmethod. Thus, the semiconductor devices can be suitably employed asvarious electronic devices and electronic parts or materials and membersthereof. Specifically, as the electronic devices in which the flipchip-mounted semiconductor devices of the invention are utilized, theremay be mentioned so-called “mobile phones” and “PHS”, small-sizedcomputers [e.g., so-called “PDA” (handheld terminals), so-called“notebook-sized personal computer”, so-called “Net Book (trademark)”,and so-called “wearable computers”, etc.], small-sized electronicdevices having a form where a “mobile phone” and a computer areintegrated, so-called “Digital Camera (trademark)”, so-called “digitalvideo cameras”, small-sized television sets, small-sized game machines,small-sized digital audio players, so-called “electronic notepads”,so-called “electronic dictionary”, electronic device terminals forso-called “electronic books”, mobile electronic devices (portableelectronic devices) such as small-sized digital type watches, and thelike. Needless to say, electronic devices (stationary type ones, etc.)other than mobile ones, e.g., so-called “desktop personal computers”,thin type television sets, electronic devices for recording andreproduction (hard disk recorders, DVD players, etc.), projectors,micromachines, and the like may be also mentioned. In addition,electronic parts or materials and members for electronic devices andelectronic parts are not particularly restricted and examples thereofinclude parts for so-called “CPU” and members for various memory devices(so-called “memories”, hard disks, etc.).

EXAMPLES

The following will illustratively describe preferred Examples of theinvention in detail. However, the invention is not limited to thefollowing Examples unless it exceeds the gist thereof. Moreover, part ineach example is a weight standard unless otherwise stated.

Example 1

<Preparation of Film for Flip Chip Type Semiconductor Back Surface>

117 parts of an epoxy resin (trade name “EPIKOTE 1004” manufactured byJER Co., Ltd.), 117 parts of a phenol resin (trade name “MIREX XLC-4L”manufactured by Mitsui Chemicals, Inc.), 83 parts of a spherical silica(trade name “SO-25R” manufactured by Admatechs Company Limited), 4 partsof a dye (trade name “Oil Black BS” manufactured by Orient ChemicalIndustries Co., Ltd.), and 1.7 parts of a thermal curing-acceleratingcatalyst (trade name “2PHZ-PW” manufactured by Shikoku ChemicalsCorporation) based on 100 parts of an acrylic acid ester-based polymer(trade name “PARACRON W-197CM” manufactured by Negami ChemicalIndustrial Co., Ltd.) having ethyl acrylate and methyl methacrylate asmain components were dissolved in methyl ethyl ketone to prepare asolution of an adhesive composition having a solid concentration of23.6% by weight.

The solution of the adhesive composition was applied on a releasablytreated film, as a release liner (separator), composed of a polyethyleneterephthalate film having a thickness of 38 μm, which had been subjectedto a silicone-releasing treatment, and then dried at 130° C. for 2minutes to prepare a film for flip chip type semiconductor back surfacehaving a thickness (average thickness) of 20 μm.

Examples 2 to 16 and Comparative Examples 1 and 2

In Examples 2 to 16 and Comparative Examples 1 and 2, films for flipchip type semiconductor back surface were prepared in the same manner asin Example 1 except that individual blending amounts were changed asshown in Table 1. In Table 1, blanks show 0 part by weight. Thethickness of each of the obtained films for flip chip type semiconductorback surface is shown in Table 2.

TABLE 1 Acrylic Epoxy Phenol rubber resin resin Filler Curing PARACRONEPIKOTE MIREX SO- catalyst W-197CM 1004 XLC-4L 25R 2PHZ-PW Example 7 10070 80 167 Examples 2 100 109 125 334 and 8 Examples 3 100 187 214 751and 9 Examples 4 100 109 125 83 1 and 10 Examples 5 100 187 214 334 2and 11 Examples 6 100 420 482 1002 3 and 12 Example 13 100 12 13 31Example 14 100 420 482 1503 3 Example 15 100 12 13 125 Example 16 100887 1017 2004 6 Comparative 100 187 214 26 Example 1 Comparative 100 8871017 3007 6 Example 2 (unit: part(s) by weight)(Volume Contraction Ratio)

The volume contraction ratio within a range of 23° C. to 165° C. at thethermal curing of the film for flip chip type semiconductor back surfacebefore thermal curing was determined as follows.

First, for measuring the volume contraction ratio of each of the filmsfor flip chip type semiconductor back surface of Examples 1 to 16 andComparative Examples 1 and 2, each of the film for flip chip typesemiconductor back surface having a thickness of 60 μm was prepared.Then, a sample obtained by laminating the film for flip chip typesemiconductor back surface having a thickness of 60 μm on asemiconductor chip having a size of 10 mm×10 mm and a thickness of 0.05mm was prepared and a degree of warp “X” at the time when curing wasperformed under conditions of 165° C. and 2 hours was measured. Thedegree of warp was measured based on the method to be mentioned later.Thereafter, for the constitution where the film for flip chip typesemiconductor back surface having a thickness of 60 μm was laminated onthe semiconductor chip having a size of 10 mm×10 mm and a thickness of0.05 mm, simulation was performed with changing its assumed linearexpansion coefficient to determine a linear expansion coefficient atwhich the degree of warp was X. Then, a volume contraction ratio wasobtained by tripling the linear expansion coefficient. On this occasion,temperature was changed in the range of 165° C. to 23° C. in thesimulation and the linear expansion coefficient was assumed to beconstant in the temperature range.

<Measurement of Tensile Storage Modulus at 23° C. after Thermal Curing>

The tensile storage modulus was obtained by preparing a thermally curedfilm for semiconductor back surface and measuring the modulus in atensile mode under conditions of a sample width of 10 mm, a samplelength of 22.5 mm, a sample thickness of 0.2 mm, a frequency of 1 Hz,and a temperature elevating rate of 10° C./min under a nitrogenatmosphere at a prescribed temperature (23° C.) using a dynamicviscoelasticity measuring apparatus “Solid Analyzer RS A2” manufacturedby Rheometrics Co., Ltd. The results are shown in Table 2.

(Degree of Warp of Semiconductor Package)

After the separator was first peeled from the dicing tape-integratedfilm for semiconductor back surface, a semiconductor wafer (diameter: 8inches, thickness: 200 μm; a silicon mirror wafer) was attached onto thefilm for semiconductor back surface by roller press-bonding at 70° C.Further, dicing of the semiconductor wafer was performed. The dicing wasperformed as full cut so as to be a chip size of 10 mm square. In thisregard, attaching conditions and dicing conditions are as follows.

[Attaching Conditions]

Attaching apparatus: trade name “MA-3000III” manufactured by Nitto SeikiCo., Ltd.

Attaching speed: 10 mm/min

Attaching pressure: 0.15 MPa

Stage temperature at the time of attaching: 70° C.

[Dicing Conditions]

Dicing apparatus: trade name “DFD-6361” manufactured by DISCOCorporation

Dicing ring: “2-8-1” (manufactured by DISCO Corporation)

Dicing speed: 30 mm/sec

Dicing blade:

-   -   Z1; “203O-SE 27HCDD” manufactured by DISCO Corporation    -   Z2; “203O-SE 27HCBB” manufactured by DISCO Corporation

Dicing blade rotation speed:

-   -   Z1; 40,000 r/min    -   Z2; 45,000 r/min

Cutting method: step cutting

Wafer chip size: 10.0 mm square

Next, the semiconductor chip obtained by dicing was picked up from thepressure-sensitive adhesive layer together with the film for flip chiptype semiconductor back surface by pushing-up from the dicing tape sideof the dicing tape-integrated film for semiconductor back surface with aneedle. The picking-up conditions are as follows.

[Picking-Up Conditions]

Picking-up apparatus: trade name “SPA-300” manufactured by Shinkawa Co.,Ltd.

Number of picking-up needles: 9 needles

Pushing-up speed of needle: 20 mm/s

Pushing-up distance of needle: 500 μm

Picking-up time: 1 second

Dicing tape-expanding amount: 3 mm

Subsequently, the semiconductor chip was flip chip-bonded onto a BTsubstrate [substrate using a BT resin (bismaleimide triazine-basedresin) manufactured by Mitsubishi Gas Chemical Co., Inc.]. On thisoccasion, the bonding was performed as follows: the circuit surface ofthe semiconductor chip was faced to the BT substrate and a bump formedon the circuit surface of the semiconductor chip was brought intocontact with a conducting material for bonding (solder) adhered to aconnection pad of the BT substrate and temperature was elevated to 260°C. to melt the conducting material under pressing, followed by coolingto room temperature. Furthermore, an underfill material as anencapsulating resin was filled into a gap between the semiconductor chipand the BT substrate. The thickness of the underfill (encapsulatingmaterial) was 20 μm. Then, a degree of warp of the semiconductor package(degree of warp of the semiconductor package before reflow) wasmeasured. The results are shown in Table 2.

Subsequently, the semiconductor package was heated under conditions of260° C. and 30 minutes, and then a degree of warp of the semiconductorpackage (degree of warp of the semiconductor package after reflow) wasmeasured. The results are shown in Table 2.

The measurement of the degree of warp was performed by first placing thesemiconductor package on a flat plate so that the BT substrate wasdownside and measuring a height of the BT substrate lifted from the flatplate, i.e., a degree of warp (μm). The measurement was performed underconditions of a measuring rate of 1.5 mm/s and a load of 1 g using acontact-type surface roughness gauge (DEKTAK 8 manufactured by VeecoInstruments Inc.). As a result of the measurement, the case where thedegree of warp was 100 μm or less was ranked “Very good”, the case wherethe degree of warp was 100 μm or more to 500 μm or less was ranked“Good”, the case where the degree of warp was 500 μm or more to 1,000 μmor less was ranked “Moderate”, and the case where the degree is morethan 1,000 μm was ranked “Bad”.

TABLE 2 Contraction Before reflow After reflow rate Elastic Degree ofDegree of (ppm/° C.) modulus Thickness warp warp (165→23° C.) (GPa) (μm)(μm) Evaluation (μm) Evaluation Example 1 146 2 20 −64 Very good −153Good Example 2 3 −26 Very good −29 Very good Example 3 4 14 Very good112 Good Example 4 292 2 16 Very good 104 Good Example 5 3 91 Very good270 Good Example 6 4 152 Good 393 Good Example 7 146 2 30 52 Very good15 Very good Example 8 3 109 Good 198 Good Example 9 4 156 Good 309 GoodExample 10 292 2 159 Good 300 Good Example 11 3 237 Good 528 ModerateExample 12 4 302 Good 822 Moderate Example 13 146 0.2 20 −551 Moderate−569 Moderate Example 14 292 6 30 524 Moderate 938 Moderate Example 1550 2 20 −510 Moderate −535 Moderate Example 16 500 4 30 619 Moderate 953Moderate Comparative 50 0.2 20 −977 Moderate −1019 Bad Example 1Comparative 500 6 30 1181 Bad 1427 Bad Example 2(Results)

As is understood from Table 2, it was confirmed that the degree of warpof a semiconductor package could be suppressed when the film forsemiconductor back surface was one in which a volume contraction ratiowithin a range of 23° C. to 165° C. at thermal curing of the film forflip chip type semiconductor back surface before thermal curing is 100ppm/° C. or more to 400 ppm/° C. or less, as in Examples 1 to 16.

While the present invention has been described in detail and withreference to specific embodiments thereof, it will be apparent to oneskilled in the art that various changes and modifications can be madetherein without departing from the scope thereof.

This application is based on Japanese patent application No. 2010-169501filed Jul. 28, 2010, the entire contents thereof being herebyincorporated by reference.

What is claimed is:
 1. A sheet for flip chip type semiconductor backsurface to be formed on a back surface of a semiconductor element flipchip-connected onto an adherend, wherein the sheet for flip chip typesemiconductor back surface is a sheet before thermal curing and has, atthe thermal curing thereof, a volume contraction ratio within a range of23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C., wherein a tensilestorage elastic modulus of the sheet in an uncured state at 23° C. is 1GPa or more, and wherein the sheet after the thermal curing has atensile storage elastic modulus at 23° C. within a range of 1 GPa to 5GPa.
 2. The sheet for flip chip type semiconductor back surfaceaccording to claim 1, wherein the sheet for flip chip type semiconductorback surface has a thickness within a range of 10 μm to 40 μm.
 3. Adicing tape-integrated sheet for semiconductor back surface, comprisinga dicing tape and the sheet for flip chip type semiconductor backsurface according to claim 1 laminated on the dicing tape, wherein thedicing tape comprises a base material and a pressure-sensitive adhesivelayer laminated on the base material, and the sheet for flip chip typesemiconductor back surface is laminated on the pressure-sensitiveadhesive layer of the dicing tape.
 4. A process for producing asemiconductor device using the dicing tape-integrated sheet forsemiconductor back surface according to claim 3, the process comprising:attaching a semiconductor wafer onto the sheet for flip chip typesemiconductor back surface of the dicing tape-integrated sheet forsemiconductor back surface, dicing the semiconductor wafer to form asemiconductor element, peeling the semiconductor element from thepressure-sensitive adhesive layer of the dicing tape together with thesheet for flip chip type semiconductor back surface, and connecting thesemiconductor element onto an adherend.
 5. The process for producing asemiconductor device according to claim 4, wherein said flip chipconnecting comprises filling an encapsulating resin into a gap betweenthe adherend and the semiconductor element flip chip-bonded on theadherend, followed by thermally curing the encapsulating resin.
 6. Aflip chip type semiconductor device comprising an adherend, asemiconductor element mounted on the adherend, and a sheet for flip chiptype semiconductor back surface, wherein the sheet for flip chip typesemiconductor back surface is a sheet before thermal curing and has, atthe thermal curing thereof, a volume contraction ratio within a range of23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C., wherein a tensilestorage elastic modulus of the sheet in an uncured state at 23° C. is 1GPa or more, and wherein the sheet after the thermal curing has atensile storage elastic modulus at 23° C. within a range of 1 GPa to 5GPa.